Vanguard International Semiconductor Corporation

Nai-Lun Cheng

Jian-Hsing Lee

Shao-Chang Huang

Yeh-Ning Jou

Ching-Yi Hsu

Chieh-Yao Chuang

Yu-Chen Wu

Hsien-Feng Liao

Ting-Yu Chang

Kan-Sen Chen

A semiconductor structure is provided. At least one first well region is disposed in a semiconductor substrate and has a first conductivity type. At least one gate of a transistor is disposed over the first well region and extends in a first direction. At least one second well region and at least one third well region are disposed on opposite sides of the first well region and extend in the first direction. The second and third well regions have a second conductivity type. A first shielding structure is disposed on at least one end of the gate and partially overlaps the first well region in a vertical projection direction. The first shielding structure is separated from the end of the gate. A bulk ring is disposed in the semiconductor substrate and surrounds the gate, the second well region, the third well region, and the first shielding structure.

Semiconductor structure with a gate and a shielding structure

Growing community of inventors

Zhubei, Taiwan

Nai-Lun Cheng