Industrial Technology Research Institute

Taiwan Semiconductor Manufacturing Comp. Ltd.

Nai-Hao Kuo

Po-Hao Tsai

Yuh-Wen Lee

I-Cherng Chen

Jing-Hung Chiou

Chun-Hsun Chu

Kai-Hsiang Yen

Ran-Jin Lin

Yu-Tang Shen

Chun-Te Chuang

Po-Hsun Sung

Shao-Hsing Yeh

Hsin-Tang Chien

Yu-Sheng Hsieh

Jih-Wen Wang

Peter Chang

Wen-Jiun Liu

Kaihsiang Yen

Arthur Lin

Wen-Wang Ke

A gas detecting system, device and method use a variable pulse voltage waveform to increase the temperature of a detecting unit of the gas detecting system so it reacts with gas molecules from a particular space, and outputs a sensing signal. A processing unit of the gas detecting system then performs calculations on the sensing signal, such that an analysis unit may determine the presence of a target gas in the particular space, and further the composition and concentration of the target gas within the particular space, thus providing a detection that is accurate, rapid and convenient.

Gas detecting system, device and method

A touch apparatus, a transparent scan electrode, a geometric electrode structure and a manufacturing method thereof are disclosed. The transparent scan electrode structure comprises a first transparent scan electrode, a second transparent scan electrode and an isolative layer. The first transparent scan electrode comprises a first resistance region and a second resistance region. A resistance value of the second resistance region is higher than that of the first resistance region. The isolative layer is disposed between the first transparent scan electrode and the second transparent scan electrode.

Touch apparatus, transparent scan electrode structure, and manufacturing method thereof

A gas sensor is provided. The substrate of the gas sensor has a first surface, a second surface and a cavity. The cavity has an opening at the first surface. An insulating film is disposed on the first surface and covers the opening. A heating unit is embedded in the insulating film and located above the opening. An electrode pair is disposed on the insulating film and electrically separated from the heating unit. A buffer layer is disposed on the insulating film and located above the heating unit. The buffer layer is electrically connected to the electrode pair, and at least part of an orthogonal projection of the buffer layer on the first surface is located on the substrate next to the opening. The gas sensing layer is disposed on the buffer layer and has a nano-catalyst therein.

Gas sensor

A technique using a new diaphragm structure and support design is provided herein for microphones or structure designs for pressure sensing. The structure includes a set of capacitive structures. The capacitive structure has a combination of a diaphragm structure, a back plate structure and a surrounding micro-structure for fixing the diaphragm. After the diaphragm structure has deformed due to a pressure load, a gap between the back plate and the diaphragm is changed accordingly, and variation occurs in the capacitance value between the two parallel plates. By using the principle of the effect of capacitance value variation, the capacitive sensor causes the capacitance value to vary with the change in the sound, thus accomplishing the object of measuring.

Miniature acoustic transducer

An acoustic wave sensing device integrated with micro-channels and a method for the same are described. The present invention uses a piezoelectric substrate with a thinner portion serving as a sensing area and formed via a micromaching or chemical process. An inter-digital transducer (IDT) is located on the thinner portion to produce flexural plate waves (FPW). The micro-channels can be formed together with the thinner portion via the same manufacturing process, or integrated into the piezoelectric substrate via linkage. In the present invention, a novel manufacturing process and design are proposed for fabrication of the acoustic wave sensing devices with a good piezoelectric characteristic, a stable temperature compensation property, and a robust structure. Thereby, the techniques of flexural plate waves can be applied for liquid sensors. In this way, the drawbacks of the conventional acoustic wave sensing devices, such as poor piezoelectric properties and fragile film structures, are removed.

Acoustic wave sensing device integrated with micro-channels and method for the same

A fabrication method for microstructures with high aspect ratios uses a CMOS process to form a desired microstructure on a silicon substrate. The steps of forming a contact plug and a via plug of the process are used to form etching channels in insulation layers, polysilicon layers and metal layers, penetrating to the silicon substrate. An etching process is then performed through the etching channel to form the desired microstructure with high aspect ratio.

Fabrication method for microstructures with high aspect ratios

A method for forming amorphous silicon films with low defect density on single crystal silicon substrates and structures formed. The method is carried out by first providing a single crystal silicon substrate, then depositing a buffer layer by a material such as silicon oxide, silicon nitride, silicon carbide or a metal on top of the single crystal silicon substrate. An amorphous silicon film of substantial thickness, i.e. of thicker than 1 &mgr;m, is then deposited on top of the buffer layer achieving a smooth top surface.

Method for forming amorphous silicon film on single crystal silicon and structure formed

A method for fabricating a tunable, 3-dimensional solenoid utilizing CMOS fabrication technology and a back end process without using photomasks are described. In the method, two curved arms each formed of a bi-layered metal structure from metals that have different coefficients of thermal expansion for residual stress are utilized for connecting to two ends of an inductor coil formed of AlCu between the two arms. When the insulating layer of silicon dioxide is removed from the curved arms, the free ends of the arms curve up and thus, raise the inductor coil away from the surface of the semiconductor substrate into a 3-dimensional structure. When electrical voltage is applied between lower electrodes formed on the substrate and the curved arms, electrostatic force is generated to further control the length of the inductor coil by pulling down or raising the curved arms.

Growing community of inventors

Hsinchu, Taiwan

Nai-Hao Kuo