Innolux Corporation

Other

Nai-Fang Hsu

Chandra Lius

Kuan-Feng Lee

Yi-Ching Chen

Chun-Liang Lin

Yi-Hung Lin

Yung-Shun Yang

Yu-Hsien Wu

Yang-Chen Chen

Chung-Le Chen

Shuo-Ting Hong

Yu-Ti Huang

Yu-Hsiang Chiu

Yu-Chia Huang

Kung-Chen Kuo

Bo-Chin Tsuei

Hung-Kun Chen

Kuanfeng Lee

A transistor substrate is provided. The transistor substrate includes a first electrode and a second electrode. The first electrode has a slit. The slit includes a curved portion. The first electrode is used for receiving a common voltage signal. The second electrode overlaps the first electrode. The second electrode and the curved portion of the slit have an overlapping region, and an area of the overlapping region is 0.2 times to 0.8 times an area of the curved portion.

Transistor substrate

An electronic device includes a first substrate, a second substrate overlapped with the first substrate and having a first side and a second side opposite to the first side, a sensor unit disposed between the first substrate and the second substrate, a first blocking layer disposed on the first side, and a second blocking layer disposed on the sensor unit. The second side is disposed between the sensor unit and the first side. The first blocking layer has a first opening, and the second blocking layer has a second opening. A width of the first opening is smaller than a width of the second opening.

Electronic device

An electronic device is provided. The electronic device includes a substrate, a first active layer, a second active layer, a first gate electrode, a first insulator, a second gate electrode, a second insulator, a first electrode electrically connected to the second active layer, and a second electrode. The first active layer is different from the second active layer in material. The first insulator is disposed between the first active layer and the first gate electrode. The second insulator is disposed between the second active layer and the second gate electrode. The second gate electrode is disposed between the first electrode and the second active layer. The second electrode is overlapped with at least part of the second active layer. The second electrode and the first gate electrode are the same in material.

A modulation device including a plurality of electronic elements, at least one first signal line and a first driving circuit is provided. The at least one first signal line is respectively electrically connected to at least one of the electronic elements. The first driving circuit is electrically connected to the at least one first signal line. The first driving circuit provides a first signal to at least one of the at least one first signal line. The first signal includes a first pulse. The first pulse includes a first section and a second section closely adjacent to the first section.

Modulation device

Disclosed is an electronic device including a tunable element, a first power supply circuit, and a second power supply circuit. The first power supply circuit and the second power supply circuit are electrically connected to the tunable element. The first power supply circuit drives the tunable element during a first time period. The second power supply circuit drives the tunable element during a second time period.

A substrate assembly includes: a substrate; a first transistor disposed on the substrate, wherein the first transistor includes a first semiconductor layer and the first semiconductor layer is a silicon semiconductor layer; and a second transistor disposed on the substrate, wherein the second transistor includes a second semiconductor layer and a drain electrode electrically connected to the second semiconductor layer, and the second semiconductor layer is an oxide semiconductor layer, wherein the first semiconductor layer of the first transistor is electrically insulated from the drain electrode of the second transistor.

Electronic device comprising substrate assembly including two types of transistors

An electronic device includes a first substrate, a switch element disposed on the first substrate, a sensor unit disposed on the first substrate, a second substrate, and a light blocking layer. The sensor unit is disposed between the first substrate and the second substrate. The light blocking layer is disposed at a side of the second substrate opposite to the sensor unit. The light blocking layer blocks at least a portion of a light entering the sensor unit.

An electronic device includes: a first substrate; a silicon semiconductor layer disposed on the first substrate; a first oxide semiconductor layer and a second oxide semiconductor layer disposed on the first substrate; a first conductive component disposed on the first substrate and electrically connected to the silicon semiconductor layer; and a second conductive component disposed on the first conductive component and electrically connected to at least one of the first oxide semiconductor layer and the second oxide semiconductor layer, wherein the second conductive component is at least partially overlapped with the first oxide semiconductor layer and the first conductive component.

Display device

A display device having a substrate; a first thin film transistor (TFT) on the substrate, the first TFT having a first active layer, a first gate insulator, and a first gate electrode; a second TFT on the substrate, the second TFT having a second active layer, a second gate insulator and a second gate electrode. The first gate insulator is disposed between the first gate electrode and the first active layer, and the first gate insulator is in contact with the first active layer. The second gate insulator is disposed between the second gate electrode and the second active layer, and the second gate insulator is in contact with the second active layer. The first active layer is a different material than the second active layer, and a hydrogen concentration of the second gate insulator is less than a hydrogen concentration of the first gate insulator.

Display device and method for making the same

A display device includes: a substrate including a display region and a peripheral region, wherein the peripheral region is adjacent to the display region; a first transistor disposed on the peripheral region, wherein the first transistor includes a first semiconductor layer and the first semiconductor layer is a silicon semiconductor layer; and a second transistor disposed on the display region, wherein the second transistor includes a second semiconductor layer and the second semiconductor layer is an oxide semiconductor layer, wherein the first transistor is electrically connected to the second transistor.

Display device including two types of transistors

A transistor substrate is provided. The transistor substrate includes a plurality of data lines and a plurality of scan lines. The scan lines intersect with the data lines to define a plurality of pixel units. One of the pixel units includes a first electrode, a second electrode and a switching transistor. The first electrode has a slit including a major axis portion and a curved portion connected to the major axis portion. One of the first electrode and the second electrode is used for receiving a pixel voltage signal, and the other is used for receiving a common voltage signal. The switching transistor includes a switching electrode. The switching electrode and the curved portion of the slit have an overlapping region, and an area of the overlapping region is 0.2 times to 0.8 times an area of the curved portion.

Transistor substrate and display device manufactured from the transistor substrate

An electronic device includes a first substrate, a display unit disposed on the first substrate, a sensor unit disposed on the first substrate, and a first light blocking layer disposed between the sensor unit and the first substrate. The first light blocking layer blocks a light entering the sensor unit.

A display device is disclosed, which includes: a first substrate; an oxide semiconductor layer disposed on the first substrate; a silicon semiconductor layer disposed on the first substrate; and a capacitor including a first conductive component and a second conductive component, wherein the first conductive component is electrically connected to the oxide semiconductor layer and the second conductive component is electrically connected to the silicon semiconductor layer.

A transistor substrate is provided. The transistor substrate includes a plurality of data lines and a plurality of scan lines, wherein the scan lines intersects with the data lines to define a plurality of pixel units. One of the pixel units includes a first electrode having a slit substantially parallel to the data lines. The pixel units include a second electrode and a switching transistor. The switching transistor includes a gate electrode connecting to one of the scan lines. The gate electrode has a first edge substantially parallel to the extending direction of the scan lines. The switching transistor includes a drain electrode electrically connected to one of the first electrode and the second electrode. The drain electrode includes an extending portion which extends toward the slit and extends away from an extending line of the first edge. The drain electrode and the slit have an overlapping region.

Growing community of inventors

Miao-Li County, Taiwan

Nai-Fang Hsu