Fujitsu Corporation

Fujitsu Frontech Limited

Fujitsu Yamanashi Electronics Limited

Fujitsu Quantum Devices Limied

Nagahisa Furutani

Kazuhiro Matsumoto

Manabu Kai

Satoru Nogami

Yutaka Hirano

Hiroshi Mugiya

Nobutoshi Fukuden

Kazuo Takahara

Tsuneyuki Tanaka

Yoshikazu Doi

Isao Imai

Haruo Yokouchi

An antenna includes a dielectric substrate, a ground electrode provided on a first surface of the dielectric substrate, a first antenna element and a second antenna elements provided to a second surface of the dielectric substrate, the first and second antenna elements having an identical resonance frequency and an identical Q value, a transmission line connecting the first and second antenna elements, and a feed part provided in the transmission line.

Antenna and electronic device equipped with the same

An electronic device includes an antenna and a semiconductor element. The antenna includes a first conductor section that includes a first feeding point and spreads flatly, and a second conductor section that includes a second feeding point and spreads flatly while facing the first conductor section, the first conductor section and the second conductor section being disposed so as to be symmetric with respect to a plane, including a position of the first feeding point and a position of the second feeding point. The semiconductor element supplies the first feeding point and the second feeding point with signals opposite to each other in polarity, respectively, thereby communicating via the antenna.

Electronic device, antenna and article

A high-frequency circuit device includes a varactor diode having a first terminal and a second terminal, a first strip line connected to the first terminal of the varactor diode, a voltage being applied to the varactor diode via the first terminal, a second strip line having a first end connected to the second terminal of the varactor diode, and a second open end. The second strip line has a length so as to obtain an equivalent strip line length taking into capacitances of the varactor diode and the second strip line. The equivalent strip line length determines a characteristic of the high-frequency circuit device.

High frequency circuit device with stripline having an adjustable

In a hybrid integrated circuit module in which circuit components, including semiconductor devices and chip components, are integrated and which is bonded onto a heat-sinking substrate, a substrate for mounting chip components is made of a low thermal conductivity material and is bonded onto the heat-sinking substrate; a base plate for mounting semiconductor devices is made of a high thermal conductivity material and is bonded onto the heat-sinking substrate; a hollow cover covers a space above the base plate to make an enclosure between the base plate and the cover; a sealing means hermetically seals the enclosure; and a plurality of interconnection leads is formed through the cover to electrically connect a circuit on the base plate and a circuit on the substrate and for testing operating signals in the semiconductor devices.

Hybrid integrated circuit module

A selection unit, which is provided between an input matching unit and a high frequency amplification unit, is used to select a specific high frequency band to be amplified by the high frequency amplification unit from high frequency signals input from an input terminal. Further, an attenuation unit, which is provided between an input of the high frequency amplification unit and ground, is used to attenuate the input high frequency signals except for the specific high frequency band. Therefore, the specific high frequency band of the input high frequency signals is transferred from the input terminal to the high frequency amplification unit through the selection unit with a small loss, and the input high frequency signals except for the specific high frequency band are attenuated by the attenuation unit. Further, not only can stability of the high frequency amplification unit in the specific high frequency band used for the amplifier be realized, but stability of the high frequency amplification unit in other frequency bands except for the specific high frequency band can be also realized. Consequently, the high frequency amplifier does not oscillate and is not damaged.

High frequency amplifier having stable amplification operation

A high efficiency RF power amplifier includes a field effect transistor having a grounded source, a gate receiving an input signal, and a drain. A first inductor has a first end coupled to the drain via a lead inductance, and a second end through which an amplified output signal is output. A first capacitor has a first end grounded and a second end coupled to the second end of the first inductor. A second inductor has a first end receiving a drain bias voltage and a second end coupled to the second end of the first inductor. The second inductor is formed of a distributed-constant element. The first capacitor and the second inductor form a parallel resonant circuit coupled to the drain at a fundamental operating frequency of the high efficiency RF power amplifier, so that the drain is set to a high-impedance state. The first inductor, the first capacitor and the lead inductance form a serial resonant circuit coupled to the drain at a second harmonic of the fundamental operating frequency, so that the drain is set to a low-impedance state.

High efficiency RF power amplifier

A diode limiter including a signal line connects an input terminal to which a high power electric pulse signal is applied and an output terminal connected to a receiver. A PIN diode conducts when the high power electric pulse signal is applied thereto and provides a low impedance connection of the signal line to ground. A directional coupler extracts a part of the high power electric pulse signal out of the signal line. A detector diode is inserted in the return direct current path of the PIN diode, a resistor is inserted into the path including the directional coupler, and a means is provided for applying the voltage generated in the resistor to the PIN diode.

Diode limiter

A microwave signal amplifier comprising transistor having input and output terminals further includes input and output matching circuits connected to the input and output terminals, respectively, and corresponding bias supply circuits connected in parallel between said transistor and said input and output matching circuits, respectively. The input and output matching circuits are each implemented by high pass filters, and the bias supply circuits are each implemented by low pass filters. Furthermore, said high pass and low pass filters respectively have capacitors and inductors connected to the transistor, and said low pass filters have termination resistors.

Growing community of inventors

Kawasaki, Japan

Nagahisa Furutani