Applied Materials, Inc.

Nag B Patibandla

Hou Tee Ng

Mingwei Zhu

Sivapackia Ganapathiappan

Rajeev Bajaj

Daniel Redfield

Daihua Zhang

Yingdong Luo

Kasiraman Krishnan

Zihao Yang

Boyi Fu

Ashwin Chockalingam

Fred Conrad Redeker

Raanan Y Zehavi

Ashavani Kumar

Mahendra Christopher Orilall

Ajey M Joshi

Daniel Lee Diehl

Yong Cao

Gregory E Menk

Zhebo Chen

Jason Garcheung Fung

Mayu Felicia Yamamura

Anantha K Subramani

Vivek Agrawal

Eric Ng

Mario Dagio Cornejo

Rongjun Wang

Bernard Frey

Bharath Swaminathan

Robert E Davenport

Russell Edward Perry

Byung Sung Kwak

Mohammad Kamruzzaman Chowdhury

Shane Lavan

Jeffrey L Franklin

Lisong Xu

Amritanshu Sinha

Shriram Mangipudi

Robert Jan Visser

Han-Wen Chen

Kyuil Cho

Aniruddh Jagdish Khanna

Veera Raghava Reddy Kakireddy

Venkat Hariharan

Uma Sridhar

Ludovic Godet

Xianmin Tang

Ankit Vora

Periya Gopalan

Kashif Maqsood

Nir Yahav

Adi De La Zerda

Sudhakar Madhusoodhanan

Li-Qun Xia

Christopher Dennis Bencher

Jeonghoon Oh

Pravin K Narwankar

Banqiu Wu

Ralf Hofmann

Yan Zhao

Kulandaivelu Sivanandan

Omkaram Nalamasu

David Masayuki Ishikawa

Ranga Rao Arnepalli

Paul J Steffas

Toshiaki Fujita

Srinivas Satya

Kartik Ramaswamy

Srinivas D Nemani

Jennifer Y Sun

Dominic J Benvegnu

Muhammad M Rasheed

Todd J Egan

Thomas B Brezoczky

Lan Yu

Simon Yavelberg

Sriskantharajah Thirunavukarasu

Cheng-Hsiung Matt Tsai

Swaminathan T Srinivasan

Edward W Budiarto

Weimin Zeng

Christopher A Rowland

Lu Yang

Timothy B Michaelson

Giorgio Cellere

Karthik Elumalai

Dinesh Saigal

Fabio Pieralisi

Niranjan Ramchandra Khasgiwale

Praburam Gopal Raja

Thean Ming Tan

Igor Abramson

Mo Yang

Mengnan Zou

Liang Zhao

Jean Lu

Shumao Zhang

Anthony Kipkorir

Renjing Zheng

Exemplary methods of fabricating high quality quantum computing components are described. The methods include removing native oxide from a deposition surface of a silicon substrate in a cleaning chamber of a processing system, and transferring the silicon substrate under vacuum to a deposition chamber of the processing system. The methods further include depositing an aluminum layer on the deposition surface of the silicon substrate in the deposition chamber, where an interface between the aluminum layer and the deposition surface of the silicon substrate is oxygen free.

High quality quantum computer components

A superconducting nanowire single photon detector (SNSPD) device includes a substrate having a top surface, an optical waveguide on the top surface of the substrate to receive light propagating substantially parallel to the top surface of the substrate, a seed layer of metal nitride on the optical waveguide, and a superconductive wire on the seed layer. The superconductive wire is a metal nitride different from the metal nitride of the seed layer and is optically coupled to the optical waveguide.

SNSPD with integrated aluminum nitride seed or waveguide layer

A photocurable composition includes quantum dots, quantum dot precursor materials, a chelating agent, one or more monomers, and a photoinitiator. The quantum dots are selected to emit radiation in a first wavelength band in the visible light range in response to absorption of radiation in a second wavelength band in the UV or visible light range. The second wavelength band is different than the first wavelength band. The quantum dot precursor materials include metal atoms or metal ions corresponding to metal components present in the quantum dots. The chelating agent is configured to chelate the quantum dot precursor materials. The photoinitiator initiates polymerization of the one or more monomers in response to absorption of radiation in the second wavelength band.

Chelating agents for quantum dot precursor materials in color conversion layers for micro-LEDs

A display screen includes a backplane, an array of light-emitting diodes electrically integrated with the backplane, the array of light-emitting diodes configured to emit UV light in a first wavelength range, and a plurality of isolation walls formed on the backplane between adjacent light-emitting diodes of the array of light-emitting diodes with the isolation walls spaced apart from the light-emitting diodes and extending above the light-emitting diodes. The plurality of isolation walls include a core of a first material and a coating covering at least a portion of the core extending above the light-emitting diodes. The coating is an opaque second material having transmittance less than 1% of light in the first wavelength range.

Micro-LED displays to reduce subpixel crosstalk

A method of fabricating a multi-color display includes forming a host matrix over a display having an array of light emitting diodes. The host matrix is sensitive to ultraviolet light. A first plurality of light emitting diodes in a first plurality of wells are activated to illuminate a portion of the host matrix to cause the portion of the host matrix to develop internal porous structures. A first photo-curable fluid including a first color conversion agent is dispensed. The first plurality of light emitting diodes in the first plurality of wells are activated to illuminate and cure the first photo-curable fluid to form a first color conversion layer over each of the first plurality of light emitting diodes, and an uncured remainder of the first photo-curable fluid is removed.

Print process for color conversion layer using porous host or positive photoresist

A method for manufacturing micro-LED displays includes depositing a first material over a substrate having a plurality of micro-LEDs such that the plurality of micro-LEDs are covered by the first material and the first material fills gaps laterally separating the micro-LEDs, removing a portion of the first material from the gaps that laterally separate the plurality of micro-LEDs to form trenches that extend to or below light-emitting layers of the micro-LEDs, depositing a second material over the substrate such that the second material covers the first material and extends into the trenches, and removing a portion of the first and second material over the plurality of micro-LEDs to expose top surfaces of the plurality of micro-LEDs and such that isolation walls positioned in the gaps between the plurality of micro-LEDs extend vertically higher than the top surface of the first material.

Manufacturing micro-LED displays to reduce subpixel crosstalk

Liquid dispersions of quantum dot particles include an acrylic medium having a boiling point in a range of from greater than or equal to 100° C. to less than or equal to 500° C., quantum dot particles dispersed in the acrylic medium, a photo-initiator, and a surface additive. The liquid dispersions of quantum dot particles are useful as stable liquid formulations that resist gelling for spin-coating and ink-jet printing of color conversion layers in the manufacture of LED and micro-LED panels for advanced displays. Methods of manufacturing light-emitting devices using the liquid dispersions of quantum dot particles are also disclosed.

Liquid dispersion of quantum dot particles

Liquid dispersions of quantum dot particles comprise an acrylic medium and quantum dot particles dispersed in the acrylic medium have an initial viscosity. The quantum particles comprise ligands attached to the quantum dot particles, the ligands comprising functional groups configured to stabilize the initial viscosity liquid dispersion of the quantum dot particles. The liquid dispersions of quantum dot particles are useful as stable liquid formulations that resist gelling for spin-coating and inkjet printing of color conversion layers in the manufacture of LED and micro-LED panel for advanced displays. Methods of manufacturing light-emitting devices using the liquid dispersions of quantum dot particles are disclosed.

Liquid dispersion of quantum dots in an acrylic monomer medium

A superconducting device includes a substrate, a metal oxide or metal oxynitride seed layer on the substrate, and a metal nitride superconductive layer disposed directly on the seed layer. The seed layer is an oxide or oxynitride of a first metal, and the superconductive layer is a nitride of a different second metal.

High critical temperature metal nitride layer with oxide or oxynitride seed layer

A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate, exposing the seed layer to an oxygen-containing gas or plasma to form a modified seed layer, and after exposing the seed layer to the oxygen-containing gas or plasma depositing a metal nitride superconductive layer directly on the modified seed layer. The seed layer is a nitride of a first metal, and the superconductive layer is a nitride of a different second metal.

Method of making high critical temperature metal nitride layer

An LED display fabrication tool includes a plurality of process chambers and a plurality of transfer chambers. The plurality of process chambers include first and second dispensing chambers to deliver first and second color conversion precursors onto a workpiece for fabrication of a light emitting diode (LED) displays, and first and second washing/drying chambers to remove uncured portions of the first and second color conversion precursors from the workpiece and then dries the workpiece. The plurality of transfer chambers are coupled to two process chambers by two respective sealable ports. First and second curing stations cure the precursors to form the first and second color conversion layers over a first set of LEDs on the workpiece.

System configurations for fabrication of micro-LED displays

A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate at a first temperature, the seed layer being a nitride of a first metal, reducing the temperature of the substrate to a second temperature that is lower than the first temperature, increasing the temperature of the substrate to a third temperature that is higher than the first temperature to form a modified seed layer, and depositing a metal nitride superconductive layer directly on the modified seed layer at the third temperature, the superconductive layer being a nitride of a different second metal.

A multi-color display includes a backplane having backplane circuitry, an array of micro-LEDs electrically integrated with backplane circuitry of the backplane, a color conversion layer over each of a plurality of light emitting diodes, and a plurality of isolation walls separating adjacent micro-LEDs of the array.

Assembly of display with color conversion layer and isolation walls

A polishing article manufacturing system includes a feed section and a take-up section, the take-up section comprising a supply roll having a polishing article disposed thereon for a chemical mechanical polishing process, a print section comprising a plurality of printheads disposed between the feed section and the take-up section, and a curing section disposed between the feed section and the take-up section, the curing section comprising one or both of a thermal curing device and an electromagnetic curing device.

Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles

Embodiments described herein relate to integrated abrasive (IA) polishing pads, and methods of manufacturing IA polishing pads using, at least in part, surface functionalized abrasive particles in an additive manufacturing process, such as a 3D inkjet printing process. In one embodiment, a method of forming a polishing article includes dispensing a first plurality of droplets of a first precursor, curing the first plurality of droplets to form a first layer comprising a portion of a sub-polishing element, dispensing a second plurality of droplets of the first precursor and a second precursor onto the first layer, and curing the second plurality of droplets to form a second layer comprising portions of the sub-polishing element and portions of a plurality of polishing elements. Here, the second precursor includes functionalized abrasive particles having a polymerizable group chemically bonded to surfaces thereof.

Integrated abrasive polishing pads and manufacturing methods

Growing community of inventors

Pleasanton, CA, United States of America

Nag B Patibandla