Applied Materials, Inc.

Nag B Patibandia

Anantha K Subramani

Rongjun Wang

Mingwei Zhu

Vivek Agrawal

Xianmin Tang

Muhammad M Rasheed

Cheng-Hsiung Matt Tsai

Omkaram Nalamasu

Daniel Lee Diehl

Dinesh Saigal

Praburam Gopal Raja

Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.

Oxygen controlled PVD aluminum nitride buffer for gallium nitride-based optoelectronic and electronic devices

Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.

PVD buffer layers for LED fabrication

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Pleasanton, CA, United States of America

Nag B Patibandia