Samsung Electronics Co., Ltd.

Samsung Sdi Co., Inc.

Naery Yu

Songse Yi

Min-Soo Kim

Young-Min Kim

Sung-Min Kim

Sung-Hwan Kim

Hyun-Ji Song

Yun-Jun Kim

Chung-Heon Lee

Sumin Kim

Yong-Woon Yoon

Hea-Jung Kim

Seung-Hee Hong

Youn-Hee Nam

Seulgi Jeong

Jae-Yeol Baek

Byeri Yoon

Sun-Hae Kang

Yeon-Hee Jo

Sun-Min Hwang

Won-Jong Hwang

Jeongho Mun

MyeongKoo Kim

A semiconductor device manufacturing method includes forming a gate dielectric layer surrounding first semiconductor patterns and second semiconductor patterns; forming a first organic pattern covering the second semiconductor patterns; forming a sacrificial pattern interposed between the first semiconductor patterns and exposing both side surfaces of the first semiconductor patterns, and a conductive pattern surrounding the second semiconductor patterns and disposed between the first organic pattern and the second semiconductor patterns; forming a second organic pattern covering the first semiconductor patterns, the gate dielectric layer, the sacrificial pattern, and the first organic pattern; and forming a cross-linking layer interposed between the first organic material pattern and the second organic material pattern.

Method of manufacturing a semiconductor device including a plurality of channel patterns

A method of producing a layer structure includes forming a first organic layer by applying a first composition including an organic compound on a substrate having a plurality of patterns, applying a solvent on the first organic layer to remove a part of the first organic layer, and applying a second composition including an organic compound on a remaining part of the first organic layer and forming a second organic layer through a curing process.

Method of producing layer structure, layer structure, and method of forming patterns

Growing community of inventors

Suwon-si, South Korea

Naery Yu