Electronics and Telecommunications Research Institute

Nae-Man Park

Tae-Youb Kim

Gun-Yong Sung

Jong-Heon Yang

Sukyung Choi

Kyung-Hyun Kim

Jee Eun Oh

The present disclosure relates to a method of manufacturing a semiconductor material including a cellulose nanocrystal. Particularly, according to the present disclosure, by attaching an electron withdrawing group to the surface of the cellulose nanocrystal, which is a nonconductor, holes are formed in the doped cellulose nanocrystal, and the cellulose nanocrystal may be used as a semiconductor material.

Method of manufacturing a cellulose nanocrystal semiconductor material

A silicon light emitting diode capable of effectively utilizing light radiated toward the lateral side of a substrate by including a side reflecting mirror is provided. The silicon-based light emitting diode includes a p-type silicon substrate having a plurality of grooves, a light emitting diode layer formed on each of the grooves of the silicon substrate, the light emitting diode layer including an active layer, an n-type doped layer, and a transparent electrode layer, and a metal electrode including a lower metal electrode formed on the bottom surface of the p-type silicon substrate and an upper metal electrode formed on the top surface of the transparent electrode layer. The lateral surface of each of the grooves is separated from the light emitting diode layer and used as a reflecting mirror. The lateral surface is referred to as the side reflecting mirror.

Silicon-based light emitting diode using side reflecting mirror

Provided is a highly efficient silicon-based light emitting diode (LED) including a Distributed Bragg Reflector (DBR), an n-type doping layer, and a p-type substrate structure. The silicon-based LED includes: a substrate having a p-type mesa substrate structure; an active layer that is formed on the substrate and has a first surface and a second surface opposite the first surface; a first reflective layer facing the first surface of the active layer; a second reflective layer that is located on either side of the p-type substrate structure and faces the second surface of the active layer; an n-type doping layer sandwiched between the active layer and the first reflective layer; a first electrode electrically connected to the n-type doping layer; and a second electrode electrically connected to the p-type substrate structure.

Growing community of inventors

Daejeon, South Korea

Nae-Man Park