Hitachi, Ltd.

Elpida Memory, Inc.

Other

Renesas Technology Corp.

Ps4 Luxco S.a.r.l.

Nae Hisano

Hiroaki Ikeda

Kunihiko Nishi

Yasuhiro Naka

Masakazu Ishino

Hiroyuki Tenmei

Shiro Uchiyama

Hideharu Miyake

Hisashi Tanie

Kotaro Chiba

Shigeo Ohashi

Ryota Iijima

Yasuo Osone

Hideo Miura

Hiroyuki Ohta

Yuji Watanabe

Mitsuaki Katagiri

Toshiyuki Hata

Naotaka Tanaka

Ichiro Anjo

Ichio Shimizu

Shin Yamauchi

Kenji Takeda

Takeshi Tsuchiya

Akira Muto

Kisho Ashida

Hidekazu Fujimura

Mitsutoshi Honda

Kenya Kawano

Koji Hosokawa

Masanori Shibamoto

A gas compressor includes a compression mechanism, a separator tank that introduces lubricating oil to be supplied to the compression mechanism and a mixed fluid of a working fluid and lubricating oil discharged from the compression mechanism and separates the lubricating oil. An oil cooler cools the lubricating oil from the separator tank. An oil circulation path supplies cooled lubricating oil to the compression mechanism. The gas compressor includes a suction temperature sensor that detects suction temperature of the working fluid, a discharge pressure sensor that detects discharge pressure of the compressed working fluid, a rotation speed sensor that detects rotation speed of the motor. A lubricating oil state estimation unit estimates the temperature of the lubricating oil based on the detected suction temperature, discharge pressure, and rotation speed of the motor. The lubricating oil state estimation unit uses this result to estimate the deterioration state of the lubricating oil.

Gas compressor

A liquid-cooled rotary compressor includes a compressor main body having a compression chamber formed by a fixed wall and a rotating wall and compressing gas, and a liquid injection path for injecting a coolant into the compression chamber, and adjusts a discharge flow rate by changing a rotational speed of the rotating wall. The compressor includes a liquid amount adjusting unit that adjusts an amount of the coolant supplied from the liquid injection path to the compressor main body according to a change in the rotational speed of the rotating wall, and a compressed gas supply path that supplies compressed gas to a downstream side of the liquid amount adjusting unit in the liquid injection path. The compressed gas is supplied from the compressed gas supply path to the liquid injection path according to the amount of the coolant supplied to the compressor main body.

Liquid-cooled rotary compressor and coolant supply method therefor

A battery pack that reduces a temperature difference between single cells and can increase a battery capacity per volume and a container provided with the same are provided. A battery pack, includes: a battery moduleincluding a plurality of single cellsarranged in parallel in a line; and a partition memberprovided on a side surface of the battery moduleand forming a flow channelthrough which a gas for exchanging heat with the plurality of single cellsis flowable, and the partition memberis provided so that the gas flowing through the flow channeland at least two single cellsexchange heat and is inclined with respect to a direction orthogonal to an arrangement direction of the plurality of single cellsarranged in parallel in a line.

Cell pack and container provided with same

A semiconductor device comprises a mounting substrate, a semiconductor element provided above said mounting substrate, a package substrate provided above said mounting substrate with said semiconductor element therebetween and electrically connected to said semiconductor element via a primary connecting bump, a liquid cooling module cooling said semiconductor element by a liquid refrigerant, in which a heat receiving section of the liquid cooling module is disposed between said semiconductor element and said mounting substrate, and a plurality of secondary connecting bumps provided between said package substrate and said mounting substrate.

Semiconductor device having a liquid cooling module

A wafer (or a circuit board), which is used to perform three-dimensional mounting, has protrusionwhich is provided in low melting point metalfor electrically connecting mutually joined wafersand, and which defines an interval between mutually joined wafersandwithout being deformed at the time when low melting point metalis melted. A joining structure of wafersandis manufactured by using wafersand, at least one of which has protrusion. In the manufactured joining structure of wafersand, wafersandare electrically connected to each other by low melting point metal, and protrusion, which defines the interval between wafersandwithout being deformed at the time when low melting point metalis melted, is provided in low melting point metal

Wafer of circuit board and joining structure of wafer or circuit board

A bonding method (three-dimensional mounting) of semiconductor substrates is provided to sequentially bond a principal surface of a silicon wafer on which coupling bumps are formed, and a principal surface of the other silicon wafer on which pads are formed, by an adhesive applied to at least one of the principal surfaces. However, there is a problem of poor electrical coupling due to displacement of the bumps and the pads when bonded together. The present invention solves such a problem by conducting temporary positioning of the silicon wafers, adjusting the positions of the coupling bumps and pads while confirming the positions by a method such as x-ray capable of passing through the silicon wafers, and bonding the bumps and the pads together while hardening an interlayer adhesive provided between the principal surfaces of the silicon wafers by thermocompression.

Bonding method of semiconductor and laminated structure fabricated thereby

A semiconductor module comprises: semiconductor packages each comprising a semiconductor element, a wiring substrate having a wiring member connected to the semiconductor element and external terminals connected to the wiring member, and a first organic film formed on a side of the semiconductor element opposed to a side toward the wiring substrate; and a mount substrate, on which the semiconductor element is mounted. First of the semiconductor packages and second of the semiconductor packages are stacked. Second organic films are provided between the wiring substrate of the first semiconductor package and the first organic film of the second semiconductor package and between the mount substrate and the semiconductor package.

Semiconductor module in which a semiconductor package is bonded on a mount substrate

In a memory module, a plurality of semiconductor memory packages are arranged and mounted on a module board, and a control semiconductor package is disposed in a central region of the arrangement of the semiconductor memory packages, and mounted on the module board. A control semiconductor radiator thermally connected to the control semiconductor package, and a semiconductor memory radiator thermally connected to the plurality of memory packages are disposed without being thermally connected to each other in relation to a direction in which the semiconductor memory packages are arranged.

Memory module

A semiconductor device has a semiconductor chip including first and second surfaces opposed to each other in a thickness direction of the semiconductor chip, wherein the first and second surfaces include first and second electrode surfaces respectively, and first and second electrically conductive members covering the first and second electrode surfaces respectively as seen in the thickness direction to be electrically connected to the first and second electrode surfaces respectively.

Semiconductor chip, electrically connections therefor

A semiconductor device capable of reducing a temperature increase during operation thereof is provided. In the semiconductor device, an interface chip is stacked on a plurality of stacked semiconductor elements. Both an 'Si' interposer and a resin interposer are arranged under the plural semiconductor elements. The Si interposer is arranged between the resin interposer and the plural semiconductor elements. The Si interposer owns a thickness which is thicker than a thickness of a semiconductor element, and also has a linear expansion coefficient which is smaller than a linear expansion coefficient of the resin interposer, and further, is larger than, or equal to linear expansion coefficients of the plural semiconductor elements.

Semiconductor device

A resin encapsulated semiconductor package, which uses leads (lead frame), and enhances heat conducting properties and prevents breaking of lengths of bonding wire, reduction in service life of solder joints and crack of a resin while ensuring reliability on strength. A lead material uses a material containing as a main constituent material a composite alloy of Cu O and Cu, which has a thermal conductivity as high as that of copper alloys having been conventionally used, and which is sintered to have a small linear expansion coefficient as compared with such copper alloys.

Semiconductor package

Growing community of inventors

Matsudo, Japan

Nae Hisano