Uni Light Technology Inc.

Nae-Guann Yih

Bor-Jen Wu

Nai-Chuan Chen

Chien-An Chen

Yuan-Hsin Tzou

Yuan-Hsiao Chang

Yi-Lun Chou

A method for activating the P-type semiconductor layer of a semiconductor device is disclosed in this present invention. The above-mentioned method can activate the impurities in the P-type semiconductor layer of a semiconductor device by plasma. The plasma comprises a gas source including a VI Group compound element. The performance of the semiconductor device activated by plasma according to this invention is similar to the performance of the semiconductor device activated by heat in the prior art. Therefore, this invention can provide a method, other then heat, for activating the P-type semiconductor layer of a semiconductor device. Moreover, in this invention, during the activating process by plasma, the layers other than P-type semiconductor layer will not be affected by plasma. That is, the activating process according to this invention will not cause any side-reactions in the layers other than the P-type semiconductor layer of a semiconductor device. Thus, this invention discloses an efficient method for activating a P-type semiconductor layer of a semiconductor structure by plasma instead of heat.

Method for activating P-type semiconductor layer

An AlGaInP light emitting diode with improved illumination is provided. The AlGaInP light emitting diode includes a semiconductor substrate, a light re-emitting layer, an AlGaInP layer with a first doping concentration, an AlGaInP lower cladding layer with a second doping concentration less than the first doping concentration, an undoped AlGaInP active layer, an AlGaInP upper cladding layer, a window layer, an annular-shaped top electrode on the window layer and a layered electrode on a bottom of the semiconductor substrate. The light re-emitting layer includes at least a first region formed of the light re-emitting layer and a second region formed of AlOenclosing the first region. Since AlGaInP layer between the AlGaInP lower cladding layer and the light re-emitting layer has the first doping concentration larger than that of the AlGaInP lower cladding layer, the AlGaInP layer provides a transverse current spreading. The AlOregion also improves light reflection illuminating on the light re-emitting layer. As a result, the brightness performance of the light emitting diode is improved.

AlGaInP light emitting diode

The present invention provides a method for forming a semiconductor device with a metal substrate. The method includes providing at least one semiconductor substrate; forming at least one semiconductor layer on the semiconductor substrate; forming the metal substrate on the semiconductor substrate and then removing the semiconductor substrate. The metal substrate has advantages of high thermal and electrical conductivity that can improve the reliability and lifetime of the semiconductor device.

Method for forming a semiconductor device having a metal substrate

The present invention provides a method for forming a semiconductor device with a metallic substrate. The method comprises providing a semiconductor substrate. At least a semiconductor layer is formed on the semiconductor substrate. A metallic electrode layer is formed on the semiconductor layer. The metallic substrate is formed on the metallic electrode layer and the semiconductor substrate is removed. The metallic substrate has advantages of high thermal and electrical conductivity, that can improve the reliability and life-time of the semiconductor device.

Method for forming a semiconductor device having a metallic substrate

The present invention provides a light semiconductor device comprising a substrate and a first semiconductor structure on the substrate. A light emitting structure is on a first portion of the first semiconductor structure. A first contact structure is on a second portion of the first semiconductor structure. The second portion is separated from the first portion of the first semiconductor structure. The first contact structure has a first shape. A second semiconductor structure is on the light emitting structure. A transparent contact is on the second semiconductor structure and has a cut-off portion to expose the portion of the second semiconductor structure and a second shape. A second contact structure is on the cut-off portion of the transparent contact. The second contact structure contacting the second semiconductor has a third shape. The second contact structure with the third shape corresponds to both the transparent contact with the second shape and the first contact structure with the first shape whereby a relationship provides a plurality of current paths with substantially equal distances between the first contact structure and the second contact structure.

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Tao-Yuan, Taiwan

Nae-Guann Yih