Az Power, Inc

Na Ren

Ruigang Li

Zheng Zuo

A method for manufacturing a SiC mixed trench Schottky diode may include steps of providing a substrate and an epitaxial layer on top of the substrate; forming a plurality of trenches on a surface of the epitaxial layer; conducting ion implantation at a bottom portion of each trench; conducting ion implantation at sidewalls of each trench; forming an ohmic contact metal at a bottom portion of the Schottky diode; forming a Schottky contact metal on top of the epitaxial layer and in the trenches. In one embodiment, the substrate is an Ntype SiC and the epitaxial layer is an Ntype SiC. In another embodiment, the step of forming a plurality of trenches on a surface of the epitaxial layer may include the step of etching the surface of the epitaxial layer by either dry etching or wet etching.

Mixed trench junction barrier Schottky diode and method fabricating same

In one aspect, a method for manufacturing a Schottky diode with double P-type epitaxial layers may include steps of: providing a substrate; forming a first epitaxial layer on top of the substrate; forming a second epitaxial layer on top of the first epitaxial layer; depositing a third epitaxial layer on top of the second epitaxial layer; patterning the second and third epitaxial layers to form a plurality of trenches in the second and third epitaxial layers; depositing a first ohmic contact metal on a backside of the substrate; forming a second ohmic contact metal on top of the patterned third epitaxial layer; forming a Schottky contact metal at a bottom portion of each trench; and forming a pad electrode on top of the Schottky contact metal. In one embodiment, the second and third epitaxial layers can be made by Ptype SiC and Ptype SiC, respectively.

Growing community of inventors

Los Angeles, CA, United States of America

Na Ren