Samsung Electronics Co., Ltd.

Seoul National University

Samsung Sds Co., Ltd.

Na Rae Kim

Chul Kyu Kim

Sang Jin Hyun

Dae Hyun Nam

Ji Hoon Lee

Do Sun Lee

Young Chang Joo

Ryuji Tomita

Jae Young Yang

Joon Gon Lee

Do Hyun Lee

Eun Hye Ji

So Yeon Lee

Han Wool Yeon

Yoo Yong Lee

Han Hoon Kang

A method, performed by a dialogue processing device, of processing dialogue associated with a user based on dialog act information, the method comprises receiving speech information, corresponding to speech of the user, including a plurality of sentence units; identifying a first sentence unit and a second sentence unit, of the plurality of sentence units, based on receiving the speech information; extracting a first dialog act indicative of an intention of the first sentence unit and extracting a second dialog act indicative of an intention of the second sentence unit; extracting a first dialog act indicative of an intention of the first sentence unit and extracting a second dialog act indicative of an intention of the second sentence unit; processing the first sentence unit and the second unit in a sequence according to respective priority orders assigned based on a number of empty slots of dialogue frames of the sentence units.

Method of processing dialogue query priority based on dialog act information dependent on number of empty slots of the query

The present invention provides a production method of copper-carbon nanofibers, which can realize oxidation-resistant characteristics and process simplification, the production method comprising the steps of: forming a metal precursor-organic nanofiber comprising a metal precursor and an organic substance; and forming a metal-carbon nanofiber by performing a selective oxidation heat treatment to the metal precursor-organic nanofiber so as to simultaneously oxidize carbon of the organic substance and reduce the metal precursor to a metal, wherein the metal has a lower oxidation resistance than the carbon; the selective oxidation heat treatment is performed through a singly heat treatment step, not a plurality of heat treatment steps; and metal-carbon nanofibers with different structures may be formed according to the amount of partial oxygen pressure under which the selective oxidation heat treatment is performed.

Metal-carbon nanofiber and production method thereof

Semiconductor devices may have a first semiconductor element including first active regions that are doped with a first conductivity-type impurity and that are on a semiconductor substrate, a first gate structure between the first active regions, and first contacts connected to the first active regions, respectively; and a second semiconductor element including second active regions that are doped with a second conductivity-type impurity different from the first conductivity-type impurity and that are on the semiconductor substrate, a second gate structure between the second active regions, and second contacts connected to the second active regions, respectively, and having a second length greater than a first length of each of the first contacts in a first direction parallel to an upper surface of the semiconductor substrate.

Semiconductor devices including active areas with increased contact area

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Seoul, South Korea

Na Rae Kim