Jiangsu Leuven Instruments Co. Ltd

Jiangsu Xingda Steel Tyre Cord Co., Ltd.

Na Li

Dongdong Hu

Haiyang Liu

Shiran Cheng

Kaidong Xu

Xiaobo Liu

Song Guo

Zhihao Wu

Xuedong Li

Jun Zhang

Yonggang Hou

Lu Chen

Xianghui Liu

Xiang Liu

Lili Yao

Chenlu Zhu

Weigang Miao

Zhaochao Chen

Chengyi Wang

Xin Hua

Yubo Wei

Yaoyao Zhang

Yong Qiu

Disclosed is a ceramic air inlet radio frequency connection type cleaning device, comprising an etching system, a cleaning system, a power supply control device and a radio frequency cleaning mechanism, wherein the power supply control device is connected to the etching system and the cleaning system and is used for power supply switching; the etching system is connected to two single three-dimensional coil bodies of a three-dimensional coil by means of two lines of a power distribution box so as to etch a wafer in a chamber; and the cleaning system enables the lower surface of a top ceramic air inlet nozzle connected to the radio frequency cleaning mechanism to generate high negative pressure by connecting a radio frequency to the radio frequency cleaning mechanism, such that plasmas directly bombard the lower surface of the top ceramic air inlet nozzle.

Ceramic air inlet radio frequency connection type cleaning device

Disclosed is a post-plating treatment method for a one-step brass-electroplated steel wire, comprising the following steps: electroplating the surface of the steel wire with a brass alloy; immediately washing the electroplated steel wire with cold water, removing residues from the surface of the steel wire, and blow-drying the steel wire with cold air; immersing the blow-dried steel wire in a water-based coating solution; and taking the immersed steel wire out, blow-drying the steel wire with natural air, and taking the steel wire up. The water-based coating solution comprises a polyoxyethylene organic salt, sodium hypophosphite and the balance of pure water, the polyoxyethylene organic salt comprising a salt of alkyl polyoxyethylene ether phosphate and polyoxyethylene alkylamine.

Post-plating treatment method for one-step brass-electroplated steel wire

An anti-breakdown ion source discharge apparatus includes a discharge chamber, a coil support, an upper insulation fixing block, a discharge component and an ion source chamber. The discharge component includes a radio-frequency coil, a lower conductive connector and an upper conductive connector. The radio-frequency coil is fixed on a coil support base; the coil support base is clamped on an inner wall of the bottom of the ion source base; the coil support is along the circumference of the coil support base; the radio-frequency coil passes through the coil support; the upper conductive connector passes by the radio-frequency coil and the coil support base from the outside of the radio-frequency coil and extends into the bottom of the discharge chamber; and the upper insulation fixing block is sleeved over the upper conductive connector and is fixed on the inner wall of the bottom of the ion source chamber.

Anti-breakdown ion source discharge apparatus

A reaction chamber lining including an annular side wall and a flange arranged on an upper portion of the side wall. An end face of the flange extends from the side wall in a radial direction, an outer edge of the flange extends in the radial direction to form fixing flanging parts, and a hole is in each of the fixing flanging parts. The side wall includes a rectangular slot, and a position of the rectangular slot corresponds to a position of a robotic arm access hole in a side wall of a reaction chamber. The side wall includes through holes and honeycomb-shaped apertures. A face joined to the bottom of the side wall includes a disc extending inwards in the radial direction, an extending end of the disc is fitted with an outer edge of an electrode assembly. A plurality of circles of slotted holes are in the disc.

Reaction chamber lining

An etching uniformity regulating device and method. The device comprises an inductor and a capacitor connected in parallel. One end of the etching uniformity regulating device is connected to a built-in ring located at the edge of an electrostatic chuck of an etching machine, and the other end is grounded. The purpose of controlling the edge electric field is achieved by regulating a capacitance of the capacitor, so as to regulate the etching rate of the edge, thereby achieving etching uniformity.

Etching uniformity regulating device and method

The present invention provides a rotatable faraday cleaning apparatus and a plasma processing system, said apparatus comprising a cavity cover, a motor, an eccentric wheel, a long-petalled assembly, a coupling window, a gas intake nozzle, a connecting rod, a short-petalled assembly, a first sector-shaped conductor, and a second sector-shaped conductor; the cavity cover is assembled on a reactor cavity main body, the coupling window is mounted on the cavity cover, the gas intake nozzle is provided on the coupling window, the first sector-shaped conductor is assembled on the gas intake nozzle, the second sector-shaped conductor is assembled on the gas intake nozzle, the long-petalled assembly is assembled on the gas intake nozzle, the short-petalled assembly is assembled on the gas intake nozzle, the connecting rod is assembled on the long-petalled assembly, the eccentric wheel is assembled on the connecting rod, and the motor is mounted on the eccentric wheel.

Rotatable faraday cleaning apparatus and plasma processing system

The present invention provides a device for blocking plasma backflow in a process chamber to protect an air inlet structure, comprising an air inlet nozzle tightly connected to an air inlet flange. The inner cavity of the air inlet nozzle is provided with an air inlet guide body, wherein the air inlet guide body has an upper structure, a middle structure, and a lower structure, the upper, middle, and lower structures are an integrated structure, the upper, middle, and lower structures are all cylindrical, the cross-sectional diameter of the upper structure is smaller than that of the middle structure, a gas gathering area is arranged between the middle structure and the lower structure, and the middle structure and the lower structure are connected by the gas gathering area.

Device for blocking plasma backflow in process chamber to protect air inlet structure

Disclosed in the present application is an inductively coupled plasma treatment system. Said system switches the connection between a radio frequency coil and a faraday shielding device by means of a switch switching radio frequency power. When a radio frequency power supply is connected to the radio frequency coil by means of a matched network, the radio frequency power is coupled into the radio frequency coil to perform plasma treatment process. When a radio frequency power supply is connected to a faraday shielding device by means of a matched network, the radio frequency power is coupled into the faraday shielding device to perform cleaning process on a dielectric window and an inner wall of a plasma treatment cavity.

Inductively coupled plasma treatment system

Provided are a faraday cleaning device and a plasma processing system, the device comprising a reaction chamber, a bias electrode, a wafer, a chamber cover, a coupling window, an air inlet nozzle, a vertical coil, and a faraday layer, wherein the coupling window is installed at the upper end face of the chamber cover, the chamber cover is installed at the upper end face of the reaction chamber, the bias electrode is assembled inside the reaction chamber, the wafer is installed at the upper end face of the bias electrode, the air inlet nozzle is assembled inside the coupling window, the faraday layer is installed at the upper end face of the coupling window, and the vertical coil is assembled at the upper end face of the faraday layer.

Faraday cleaning device and plasma processing system

An ion beam etching system includes an etching cavity, an etching electrode, and an electrode displacement apparatus used for enabling the electrode to change a working position in the etching cavity. The electrode displacement apparatus includes a dynamic sealing mechanism, a dynamic electrode balance counterweight mechanism, an electrode displacement transmission mechanism, and an electrode displacement driving mechanism. The etching cavity includes a cavity and a cavity cover connected with the cavity. The cavity is of an irregular shape. The cavity includes a partial cylindrical body, a side plate, a tapered transition portion, and a bottom plate. The partial cylindrical body is laterally sealed by means of the side plate. The bottom plate is connected to an end of the partial cylindrical body by means of the tapered transition portion and seals the end of the partial cylindrical body.

Growing community of inventors

Xuzhou, China

Na Li