Samsung Electronics Co., Ltd.

Myungwon Lee

Gwideokryan Lee

Taeyon Lee

SangChul Sul

Min-Ho Kim

Younggu Jin

Masaru Ishii

Hirosige Goto

Taechan Kim

Sae-Young Kim

Taeseok Oh

KwangHyun Lee

Kang-Su Lee

Semiconductor devices are provided. The semiconductor devices may include a substrate, a device isolation pattern in the substrate to electrically isolate a first pixel and a second pixel from each other, a conductive pattern in the device isolation pattern, and a doping layer on a side surface of the device isolation pattern. The doping layer may have a conductivity type different from a conductivity type of the substrate.

Semiconductor devices

A binary image sensor includes a plurality of unit pixels on a substrate having a surface on which light is incident. At least one quantum dot is disposed on the surface of a substrate. A column sense amplifier circuit is configured to detect binary information of a selected unit pixel among the plurality of unit pixels from a voltage or a current detected from the selected unit pixel, and a processing unit is configured to process binary information of the respective unit pixels to generate pixel image information. Related devices and methods of operation are also discussed.

Binary image sensors including quantum dots and unit pixels thereof

An image sensor includes a semiconductor substrate, a storage node region in the semiconductor substrate, an insulating portion on the semiconductor substrate, a via contact extending through the insulating portion, a photo-electric converter in the semiconductor substrate and spaced apart from the storage node region, an organic photo-electric layer on the insulating portion, and a buffer interposed between and electrically connecting the via contact and the storage node region.

CMOS image sensor

Growing community of inventors

Hwaseong-si, South Korea

Myungwon Lee