Samsung Electronics Co., Ltd.

Myungkwan Ryu

Taesang Kim

Sangyoon Lee

Seongho Cho

Jongbaek Seon

Byungwook Yoo

Kyungbae Park

Jangyeon Kwon

Kyungseok Son

Jisim Jung

Seokjun Seo

According to example embodiments, a transistor includes a gate, a channel layer that is separate from the gate, a gate insulating layer between the gate and the channel layer, and a source electrode and a drain electrode respectively contacting a first region and a second region of the channel layer. The gate insulating layer includes an impurity metal containing region that includes an impurity metal and contacts the channel layer. The gate insulating layer includes an impurity metal non-containing region contacting the gate that is not doped with the impurity metal.

Transistors, methods of manufacturing the same, and electronic devices including transistors

A display apparatus may include: a flexible base having a first surface and a second surface; a hard base including a plurality of base members adhered onto the first surface of the flexible base; and/or an image display structure formed on the second surface of the flexible base. A method of manufacturing a display apparatus may include: preparing a flexible base having a first surface and a second surface; adhering a hard base onto the first surface of the flexible base; forming an image display structure on the second surface of the flexible base; and/or dividing the hard base into a plurality of base members.

Display apparatuses and methods of fabricating the same

Growing community of inventors

Yongin-si, South Korea

Myungkwan Ryu