Samsung Electronics Co., Ltd.

Myung Won Lee

Masaru Ishii

Hirosige Goto

Sang Chul Sul

Kyo Jin Choo

Gwi Deok Ryan Lee

Sae Young Kim

Tae Yon Lee

Gwi-Deok Ryan Lee

In Gyu Baek

An image sensor includes a semiconductor substrate providing a plurality of pixel regions, a semiconductor photoelectric device disposed in each of the plurality of pixel regions, an organic photoelectric device disposed above the semiconductor photoelectric device, and a pixel circuit disposed below the semiconductor photoelectric device. The pixel circuit includes a plurality of driving transistors configured to generate a pixel voltage signal from an electric charge generated in the semiconductor photoelectric device and the organic photoelectric device. A driving gate electrode of at least one of the plurality of driving transistors has a region embedded in the semiconductor substrate.

Image sensor and an image processing device including the same

An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2&#xd7;2 array of photodiodes, with 2 first pixels configured to detect light of a first wavelength and 2 second pixels configured to detect light of a second wavelength, each first pixel positioned adjacent to the second pixels; and a second layer overlapping the first layer, the second layer is organic, having a plurality of organic photodiodes configured to detect light of a third wavelength, each organic photodiode positioned to partially overlap 2 first photodiodes and 2 second photodiodes of the first layer.

Image sensor, method for manufacturing the same, and image processing device having the image sensor

Growing community of inventors

Hwaseong-si, South Korea

Myung Won Lee