Suzhou Lekin Semiconductor Co., Ltd.

Lg Innotek Co., Ltd.

Myung Sub Kim

Baek Jun Kim

Ju Young Park

Keon Hwa Lee

Ba Ro Lee

Yong Gyeong Lee

Sun Woo Park

Su Ik Park

Do Yub Kim

Ho Jae Kang

Jun Hee Park

Ki Bum Sung

Woo Jin Moon

The embodiment relates to a surface emitting laser package and a light emitting device including the same. The surface-emitting laser package according to the embodiment may include a housing including a cavity, a surface-emitting laser device disposed in the cavity, and a diffusion unit disposed on the housing. The diffusion unit may include a polymer layer and a glass layer disposed on the polymer layer. The polymer layer may include a first polymer layer vertically overlapping the surface emitting laser device, and a second polymer layer not vertically overlapping the surface emitting laser device. The thickness of the first polymer layer may be thinner than the thickness of the second polymer layer.

Surface emitting laser package having a diffusion part having glass and polymer layers and light emitting device including the same

In a surface emitting laser package, a surface emitting laser element and a substrate may be electrically connected through a diffusion part. In detail, according to the surface emitting laser package, a housing includes a step, the diffusion part is disposed at the step of the housing, and the surface emitting laser element and the substrate may be electrically connected through a connection wiring extending through the housing to correspond to the step and a conductive line disposed at one side of the diffusion part.

Surface emitting laser package

An embodiment relates to a surface emitting laser device and a light emitting device including the same. The surface emitting laser device according to the embodiment may include a first reflective layer; an active layer disposed on the first reflective layer; an active region disposed on the active layer and having an aperture and an insulation region disposed around the aperture; and a second reflective layer disposed on the active region. The second reflective layer may include a core reflective layer disposed in a position vertically corresponding to the aperture. The embodiment may include a cladding insulation layer disposed around the core reflective layer. The horizontal cross-section of the aperture may be different from the horizontal cross-section of the core reflective layer.

Surface emitting laser device and a light emitting device including the same

A surface-emitting laser package comprises: a substrate; a surface-emitting laser device disposed on the substrate, and having a non-emitting area and an emitting area which includes a plurality of emitters each generating a first laser beam; a housing disposed around the surface-emitting laser device; and a diffusing part disposed on the surface-emitting laser device. The emitting area has a first width in a first direction and a second width in a second direction perpendicular to the first direction, and the second width may be greater than the first width. The diffusing part outputs the first laser beam into a second laser beam having a first angle of view in the first direction and a second angle of view in the second direction, and the first angle of view may be greater than the second angle of view.

Surface-emitting laser package

A semiconductor device according to an embodiment may include a plurality of light emitting structures, a first electrode disposed around the plurality of light emitting structures, a second electrode disposed on an upper surface of the plurality of light emitting structures, a first bonding pad electrically connected to the first electrode, and a second bonding pad electrically connected to the second electrode. The plurality of light emitting structures may include a first light emitting structure that includes a first DBR layer of a first conductivity type, a first active layer disposed on the first DBR layer, and a second DBR layer of a second conductivity type disposed on the first active layer; and a second light emitting structure that includes a third DBR layer of the first conductivity type, a second active layer disposed on the third DBR layer, and a fourth DBR layer of the second conductivity type disposed on the second active layer. The first electrode may be electrically connected to the first DBR layer and the third DBR layer, and disposed between the first light emitting structure and the second light emitting structure. The second electrode may be electrically connected to the second DBR layer and the fourth DBR layer, and disposed on an upper surface of the second DBR layer and an upper surface of the fourth DBR layer.

Semiconductor device including multiple distributed bragg reflector layers

A semiconductor element package includes: a semiconductor element arranged above a first substrate; first and second electrodes arranged above the first substrate and electrically connected to the semiconductor element; a housing which is arranged above the first substrate and arranged around the semiconductor element, and which has a stepped portion in the upper area thereof; a diffusion part arranged on the stepped portion of the housing and arranged above the semiconductor element; and a plurality of via holes penetrating the first substrate and the housing.

Semiconductor element package and autofocusing device

A light emitting element disclosed in an embodiment comprises: a support substrate having a plurality of pads and a black matrix layer outside the plurality of pads; a plurality of light emitting chips, at least one of which is disposed on at least one of the plurality of pads; and a light-transmitting resin layer which is disposed on the support substrate and covers the pads, the black matrix layer, and the light emitting chips.

Growing community of inventors

Seoul, South Korea

Myung Sub Kim