Samsung Electronics Co., Ltd.

Myung-soo Hwang

Chang-min Park

Kwangsub Yoon

Jin-hong Park

Joo-On Park

Ji-sun Lee

Systems and methods for semiconductor fabrication are described. A spin coater comprises a spin chuck, a nozzle, a nozzle housing, a purge gas supply, and an organic solvent supply. The nozzle housing includes a lower housing including a solvent storage groove in which the organic solvent is stored, and an upper housing on the lower housing. The upper housing includes a nozzle insert hole on the solvent storage groove and receives the nozzle, and a gas supply hole connected to one side of the nozzle insert hole.

Spin coater and semiconductor fabrication method using the same

Spin coater and semiconductor fabrication method for reducing regeneration of photoresist

An extreme ultraviolet (EUV) exposure system capable of improving the yield of an EUV exposure process by improving EUV exposure performance, and furthermore, capable of increasing throughput or productivity of the EUV exposure process, the EUV exposure system including an EUV exposure apparatus configured to perform EUV exposure on a wafer disposed on a chuck table, a load-lock chamber combined with the EUV exposure apparatus and configured to supply and discharge the wafer to/from the EUV exposure apparatus, and an ultraviolet (UV) exposure apparatus configured to perform UV exposure by irradiating an entire upper surface of the wafer with a UV light without using a mask.

Extreme ultraviolet (EUV) exposure system and method of manufacturing semiconductor device using the same

A pellicle for a reflective mask including a pellicle body, a light shielding pattern, a grating pattern, and a pellicle frame. The pellicle body includes a central region and a peripheral region, wherein the peripheral region surrounds the central region. The light shielding pattern is formed on the peripheral region of the pellicle body; the grating pattern is formed on the light shielding pattern, and the pellicle frame is located under the peripheral region of the pellicle body, and the pellicle frame is configured to support the pellicle body.

Pellicle for a reflective mask and reflective mask assembly including the same

An apparatus for protecting an extreme ultra violet (EUV) mask includes an EUV pellicle that allows EUV light to be radiated through the EUV pellicle onto the EUV mask, the EUV pellicle having a size corresponding to a size of a slit limiting the EUV light to a predetermined portion of the EUV mask, a flexible blocking film at opposite sides of the EUV pellicle in a first direction, the first direction being a scan direction of an exposure apparatus, and a roller unit including a first roller and a second roller, a first portion of the flexible blocking film being wound around the first roller at a first side of the EUV pellicle, and a second portion of the flexible blocking film being wound around the second roller at a second side of the EUV pellicle.

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Seoul, South Korea

Myung-soo Hwang