Electronics and Telecommunications Research Institute

Myung Sim Jun

Moon Gyu Jang

Yark Yeon Kim

Tae Youb Kim

Chel Jong Choi

Chan Woo Park

Seong Jae Lee

Chil Seong Ah

Han Young Yu

Jong Heon Yang

Chang Geun Ahn

In Bok Baek

Byoung Chul Park

An Soon Kim

A method for manufacturing a biosensor includes forming a silicon nanowire channel, etching a first conductivity-type single crystalline silicon layer which is a top layer of a Silicon-On-Insulator (SOI) substrate to form a first conductivity-type single crystalline silicon line pattern, doping both sidewalls of the first conductivity-type single crystalline silicon line pattern with impurities of a second conductivity-type opposite to the first conductivity-type to form a second conductivity-type channel, forming second conductivity-type pads for forming electrodes at both ends of the first conductivity-type single crystalline silicon line pattern, forming, in an undoped region of the first conductivity-type single crystalline silicon line pattern, a first electrode for applying a reverse-bias voltage to insulate the first conductivity-type single crystalline silicon line pattern and the second conductivity-type channel from each other, and forming second electrodes for applying a bias voltage across the second conductivity-type channel on the second conductivity-type pad.

Semiconductor nanowire sensor device and method for manufacturing the same

Provided are a Schottky barrier tunnel transistor and a method of manufacturing the same that are capable of minimizing leakage current caused by damage to a gate sidewall of the Schottky barrier tunnel transistor using a Schottky tunnel barrier naturally formed at a semiconductor-metal junction as a tunnel barrier. The method includes the steps of: forming a semiconductor channel layer on an insulating substrate; forming a dummy gate on the semiconductor channel layer; forming a source and a drain at both sides of the dummy gate on the insulating substrate; removing the dummy gate; forming an insulating layer on a sidewall from which the dummy gate is removed; and forming an actual gate in a space from which the dummy gate is removed. In manufacturing the Schottky barrier tunnel transistor using the dummy gate, it is possible to form a high-k dielectric gate insulating layer and a metal gate, and stable characteristics in silicidation of the metal layer having very strong reactivity can be obtained.

Method of manufacturing a Schottky barrier tunnel transistor

Provided are a semiconductor Field-Effect Transistor (FET) sensor and a method of fabricating the same. The method includes providing a semiconductor substrate, forming a sensor structure having a fin-shaped structure on the semiconductor substrate, injecting ions for electrical ohmic contact into the sensor structure, and depositing a metal electrode on the sensor structure, immobilizing a sensing material to be specifically combined with a target material onto both sidewall surfaces of the fin-shaped structure, and forming a passage on the sensor structure such that the target material passes through the fin-shaped structure.

Semiconductor FET sensor and method of fabricating the same

Provided is a method of manufacturing a semiconductor device including a high-k dielectric thin layer formed using an interfacial reaction. The method includes the steps of: forming an oxide layer on a silicon substrate; depositing a metal layer on the oxide layer to form a metal silicate layer using an interfacial reaction between the oxide layer and the metal layer; forming a metal gate by etching the metal silicate layer and the metal layer; and forming a lightly doped drain (LDD) region and source and drain regions in the silicon substrate after forming the metal gate. In this method, a semiconductor device having high quality and performance can be manufactured by a simpler process at lower cost.

Method of manufacturing semiconductor device

Schottky barrier tunnel transistor and method of manufacturing the same

Growing community of inventors

Daejeon, South Korea

Myung Sim Jun