Senic Inc.

Sk Pucore Co., Ltd.

Myung Ok Kyun

Jung Woo Choi

Jong Hwi Park

Kap Ryeol Ku

Jung-Gyu Kim

Kap-Ryeol Ku

Jung Hwan Myung

Jongmin Shim

Ji Yeon Ryu

Hyuk Hee Han

Sang Ki Ko

Byung Kyu Jang

Jung Doo Seo

Jung Gyu Kim

Joo Young Jung

Jae Young Pai

Jeong Moo Kim

Kyeong Hwan You

A polythiol composition according to exemplary embodiments includes a first polythiol compound which provides a maximum peak in a high performance liquid chromatography (HPLC) analysis graph obtained at a wavelength of 230 nm, and a second polythiol compound having a molecular weight greater than that of the first polythiol compound and represented by CHS. A ratio of a peak area of the second polythiol compound to a peak area of the first polythiol compound, which are measured through the HPLC analysis graph at the wavelength of 230 nm, is 0.05 to 5.0%.

Polythiol composition, optical composition, and optical product

Disclosed are a silicon carbide powder and a method of manufacturing a silicon carbide ingot using the same. More particularly, the silicon carbide powder includes carbon and silicon and has a particle circularity of 0.4 to 0.9 measured through 2D image analysis.

Silicon carbide powder and method for manufacturing silicon carbide ingot using the same

Disclosed are a silicon carbide powder, a method of manufacturing a silicon carbide powder, and a silicon carbide wafer. More particularly, the silicon carbide powder includes carbon and silicon and in the silicon carbide powder, O1s/C1s of a surface measured by X-ray photoelectron spectroscopy is 0.28 or less.

Silicon carbide powder, method for manufacturing silicon carbide ingot using the same, and silicon carbide wafer

A silicon carbide wafer has one surface and the other surface opposite to the one surface. An average Rmax roughness of the one surface is 2.0 nm or less, and an average Ra roughness of the one surface is 0.1 nm or less. An edge region is a region in which a distance from an edge of the silicon carbide wafer toward a center is 5% to 75% of a radius of the silicon carbide wafer, and a central region is a region having a radius of 25% of the radius of the silicon carbide wafer at the center of the silicon carbide wafer. A difference between an average Rmax roughness of the edge region of the one surface and an average Rmax roughness of the central region of the one surface is 0.01 nm to 0.5 nm.

Silicon carbide wafer and semiconductor device

Disclosed are a silicon carbide wafer and a method of manufacturing the same. The silicon carbide wafer includes an upper surface and a lower surface, the upper surface includes a first target region, the first target region being within 85% of a radius of the upper surface based on a center of the upper surface, a first peak omega angle measured at intervals of 15 mm in a first direction in the first target region is within −1° to +1° based on a peak omega angle measured at the center of the upper surface, and the first direction is a [1-100] direction and a direction passing through the center of the upper surface.

Silicon carbide wafer and method of manufacturing same

Growing community of inventors

Gyeonggi-do, South Korea

Myung Ok Kyun