Industry-University Cooperation Foundation Hanyang University

Basf Coatings Gmbh

Samsung Display Co., Ltd.

Iucf-hyu

Myung Mo Sung

Hongbum Kim

Jin Seon Park

Jinwon Jung

Kyu-Seok Han

Kyu Seok Han

Lynn Lee

Jin Won Jung

Kwan Hyuck Yoon

Hongro Yun

Cheol Jang

Chung Sock Choi

Sang Hwan Cho

Felix Eickemeyer

Jean-Charles Flores

Daniel Loeffler

Seung Hun Kim

Maraike Ahlf

Jurgen Frank

Stephan Klotz

Juergen Frank

Hong Bum Kim

Jürgen Frank

Sang Ho Cho

Ki Bok Han

Hong Ro Yoon

Boram Cho

Michael Reinke

Jang Mi Baek

Jong Chan Kim

Daniel Loffler

Daniel LÖFFLER

Described herein is a transparent conductive film including

Transparent conductive film

Provided are a method for manufacturing a single-crystal semiconductor layer. The method of manufacturing the single crystalline semiconductor layer includes performing a unit cycle multiple times, wherein the unit cycle includes a metal precursor pressurized dosing operation in which a metal precursor is adsorbed on a surface of a single crystalline substrate by supplying the metal precursor onto the single crystalline substrate while an outlet of a chamber in which the single crystalline substrate is loaded is closed such that a reaction pressure in the chamber is increased; a metal precursor purge operation; a reactive gas supplying operation in which a reactive gas is supplied into the chamber to cause a reaction of the reactive gas with the metal precursor adsorbed on the single crystalline substrate after the metal precursor purge operation; and a reactive gas purge operation.

Method for manufacturing single-crystal semiconductor layer, structure comprising single-crystal semiconductor layer, and semiconductor device comprising structure

A pressurization type method for manufacturing elementary metal may include a metal precursor gas pressurization dosing operation of, in a state where an outlet of a chamber having a substrate is closed, increasing a pressure in the chamber by providing a metal precursor gas consisting of metal precursors, thereby adsorbing the metal precursors onto the substrate, a main purging operation of purging a gas after the metal precursor gas pressurization dosing operation, a reaction gas dosing operation of providing a reaction gas to reduce the metal precursors adsorbed on the substrate to elementary metal, after the main purging operation, and a main purging operation of purging a gas after the reaction gas dosing operation.

Pressurization type method for manufacturing metal monoatomic layer, metal monoatomic layer structure, and pressurization type apparatus for manufacturing metal monoatomic layer

A stabilized elementary metal structure is disclosed. The stabilized elementary metal structure may include an elementary metal having at least one layer and having a two-dimensional layer structure, and an organic molecular layer provided on at least one of a top surface and a bottom surface of the elementary metal.

Stabilized metal monolayer structure

A layer forming method according to one embodiment of the present invention contains a source gas dosing/pressurizing step of dosing a source gas into a chamber having a substrate loaded therein in a state in which the outlet of the chamber is closed, thereby increasing the pressure in the chamber and adsorbing the source gas onto the substrate; a first main purging step of purging the chamber, after the source gas dosing/pressurizing step; a reactive gas dosing step of dosing a reactive gas into the chamber, after the first main purging step; and a second main purging step of purging the chamber, after the reactive gas dosing step.

Method and apparatus for forming layer, metal oxide transistor and fabrication method thereof

The present invention is in the field of processes for producing flexible organic-inorganic laminates as well as barrier films comprising flexible organic-inorganic laminates by atomic layer deposition. In particular the present invention relates to a process for producing a laminate comprising more than once the sequence comprising: (a) depositing an inorganic layer by performing 4 to 150 cycles of an atomic layer deposition process, and (b) depositing an organic layer comprising sulfur by a molecular layer deposition process.

Process for producing flexible organic-inorganic laminates

Provided are a tin oxide layer, a thin film transistor (TFT) having the same as a channel layer, and a method for manufacturing the TFT. The TFT comprises a gate electrode, a tin oxide channel layer disposed on the gate electrode and being a polycrystalline thin film with preferred orientation in a [001] direction, a gate insulating film disposed between the gate electrode and the channel layer, and source and drain electrodes electrically connected to both ends of the channel layer, respectively.

Tin oxide layer, TFT having the same as channel layer, and manufacturing method for the TFT

Provided are P-type semiconductor layer, P-type multilevel element, and manufacturing method for the element. The P-type multilevel element comprises a gate electrode, an active structure overlapping the gate electrode, a gate insulating layer disposed between the gate electrode and the active structure, and source and drain electrodes electrically connected to both ends of the active structure, respectively. The active structure has a first P-type active layer, a second P-type active layer, and a barrier layer disposed between the first P-type active layer and the second P-type active layer. A threshold voltage for forming a channel in the first P-type active layer and a threshold voltage for forming a channel in the second P-type active layer have different values.

P-type semiconductor layer, P-type multilevel element, and manufacturing method for the element

A layer forming method according to one embodiment of the present invention comprises: a source gas dosing/pressurizing step of dosing a source gas into a chamber having a substrate loaded therein in a state in which the outlet of the chamber is closed, thereby increasing the pressure in the chamber and adsorbing the source gas onto the substrate; a first main purging step of purging the chamber, after the source gas dosing/pressurizing step; a reactive gas dosing step of dosing a reactive gas into the chamber, after the first main purging step; and a second main purging step of purging the chamber, after the reactive gas dosing step.

A layer according to one embodiment of the present invention may exhibit a first number of electron states in a low-level electron energy range in a conduction band, and exhibit a second number of electron states in a high-level electron energy range higher than the low-level electron energy level in the conduction band,

Layer, multilevel element, method for fabricating multilevel element, and method for driving multilevel element

A layer according to one embodiment of the present invention may exhibit a first number of electron states in a low-level electron energy range in a conduction band, and exhibit a second number of electron states in a high-level electron energy range higher than the low-level electron energy level in the conduction band, wherein localized states may exist between the low-level electron energy range and the high-level electron energy level.

Method for manufacturing elementary metal including metal precursor pressurization dosing operation

A barrier according to an embodiment of the present invention is provided. The barrier includes a polymer configured of a plurality of first atoms; and an inorganic material configured of a plurality of second atoms and coexisting with the organic material, wherein an atomic planar density defined by the number of atoms per cmof the first atoms and the second atoms exceeds 1.9&#xd7;10atoms/cm.

Barrier, barrier manufacturing method, display including barrier, and method of manufacturing display including barrier

A method for manufacturing a functionalized graphene structure includes preparing a substrate having a graphene layer, forming an organic linker layer by providing an organic linker on the graphene layer, and forming a dopant layer by providing a dopant material including a metal on the organic linker layer. The organic linker layer and the dopant layer are formed in-situ.

Growing community of inventors

Seoul, South Korea

Myung Mo Sung