Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Apple Inc.

Seoul National University

Yonsei University

Industry-academic Cooperation Foundation

Myung-Kwan Ryu

Sang-Yoon Lee

Tae-sang Kim

Jong-Baek Seon

Jae-young Choi

Sang Yoon Lee

Kyung-bae Park

Jang-yeon Kwon

Ji-sim Jung

Kyoung-seok Son

Hyun-Suk Kim

Eok-su Kim

Abbas Jamshidi Roudbari

Warren S Rieutort-Louis

Hirokazu Yamagata

Hyun-Jae Kim

Hyun-Soo Shin

Jae Won Choi

Yuchi Che

Bhadrinarayana Lalgudi Visweswaran

Ji-Sim Jung

Kyung-Bae Park

Hyun Sook Kim

Je-Hun Lee

Sung-Hee Lee

Hyeon-jin Shin

Seon-mi Yoon

Seung-Ha Choi

Mi-jeong Song

Sang-Myeon Han

Kyoung Seok Son

Min-Koo Han

Bon Won Koo

Kwang-Hee Lee

Kyung-Seok Son

Joon-seok Park

Sun-Jae Kim

Seok-jun Seo

Byung-wook Yoo

Bon-Won Koo

Jang-Yeon Kwon

Byung-Du Ahn

Euk-che Hwang

Jun-seong Kim

Tiffany T Moy

Gun-Hee Kim

Kee-chan Park

Woong-Hee Jeong

Seonpil Jang

Keisuke Otsu

Won-mook Choi

Jeong-il Park

Wan-joo Maeng

Chil Hee Chung

Tae-Sang Kim

Joon-Seok Park

Eun-Hye Park

Byung-Wook Yoo

Kyoung-Seok Son

Eok-Su Kim

Sho-Yeon Kim

Joong-hyun Park

Byung-Hwan Chu

Wan-Joo Maeng

Seok-Jun Seo

An organic light-emitting diode display may have rounded corners. A negative power supply path may be used to distribute a negative voltage to a cathode layer, while a positive power supply path may be used to distribute a positive power supply voltage to each pixel in the display. The positive power supply path may have a cutout that is occupied by the negative power supply path to decrease resistance of the negative power supply path in a rounded corner of the display. To mitigate reflections caused by the positive power supply path being formed over tightly spaced data lines, the positive power supply path may be omitted in a rounded corner of the display, a shielding layer may be formed over the positive power supply path in the rounded corner, or non-linear gate lines may be formed over the positive power supply path.

Power and data routing structures for organic light-emitting diode displays

A thin film transistor substrate includes a gate electrode, a channel layer overlapping the gate electrode, a source electrode overlapping the channel layer, a drain electrode overlapping the channel layer and the source electrode, and a spacer disposed between the source electrode and the drain electrode.

Thin film transistor substrate and method of manufacturing a thin film transistor substrate

A thin film transistor (TFT) and a method of driving the same are disclosed. The TFT includes: an active layer; a bottom gate electrode disposed below the active layer to drive a first region of the active layer; and a top gate electrode disposed on the active layer to drive a second region of the active layer. The TFT controls the conductivity of the active layer by using the bottom gate electrode and the top gate electrode.

Thin film transistor and method of driving same

Thin film transistors including a semiconductor channel disposed between a drain electrode and a source electrode; and a gate insulating layer disposed between the semiconductor channel and a gate electrode wherein the semiconductor channel includes a first metal oxide, the gate insulating layer includes a second metal oxide, and at least one metal of the second metal oxide is the same as at least one metal of the first metal oxide, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors.

Thin film transistors, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors

Provided are semiconductor films, methods of forming the same, transistors including the semiconductor films, and methods of manufacturing the transistors. Provided are a semiconductor film including zinc (Zn), nitrogen (N), oxygen (O), and fluorine (F), and a method of forming the semiconductor film. Provided are a semiconductor film including zinc, nitrogen, and fluorine, and a method of forming the semiconductor film. Sputtering, ion implantation, plasma treatment, chemical vapor deposition (CVD), or a solution process may be used in order to form the semiconductor films. The sputtering may be performed by using a zinc target and a reactive gas including fluorine. The reactive gas may include nitrogen and fluorine, or nitrogen, oxygen, and fluorine.

Methods of forming semiconductor films and methods of manufacturing transistors including semiconductor films

According to example embodiments, a semiconductor material may include zinc, nitrogen, and fluorine. The semiconductor material may further include oxygen. The semiconductor material may include a compound. For example, the semiconductor material may include zinc fluorooxynitride. The semiconductor material may include zinc oxynitride containing fluorine. The semiconductor material may include zinc fluoronitride. The semiconductor material may be applied as a channel material of a thin film transistor (TFT).

Semiconductor materials, transistors including the same, and electronic devices including transistors

A solution composition for forming an oxide semiconductor includes a metal oxide precursor, and one of a metal thioacetate and a derivative thereof.

Solution composition for forming oxide semiconductor, and oxide semiconductor and electronic device including the same

A method of preparing a thin film includes coating a thin film-forming composition on a substrate, and heat-treating the coated thin film-forming composition under a pressure less than 760 Torr. The thin film includes a compact layer having a thickness in a range of greater than 50 &#x212b; to about 20,000 &#x212b; and a refractive index in a range of about 1.85 to about 2.0.

Method of preparing thin film, thin film, apparatus for preparing thin film, and electronic device including thin film

A transistor may include a hole blocking layer between a channel layer including oxynitride and an electrode electrically connected to the channel layer. The hole blocking layer may be disposed in a region between the channel layer and at least one of a source electrode and a drain electrode. The channel layer may include, for example, zinc oxynitride (ZnON). A valence band maximum energy level of the hole blocking layer may be lower than a valence band maximum energy level of the channel layer.

Transistor, method of manufacturing the same, and electronic device including transistor

According to example embodiments, a transistor may include a gate electrode, a gate insulating layer, and a channel layer stacked on each other; and a source electrode and a drain electrode contacting first and second regions of the channel layer, respectively. The channel layer may include metal oxynitride. The first and second regions of the channel layer may be treated with a plasma containing hydrogen, and the first and second regions have a higher carrier concentration than a carrier concentration of a remaining region of the channel layer. The first and second regions of the channel layer may have a lower oxygen concentration and a higher nitrogen concentration than that of the remaining region thereof. The metal oxynitride of the channel layer may include a zinc oxynitride (ZnON)-based semiconductor.

Transistors including a channel where first and second regions have less oxygen concentration than a remaining region of the channel, methods of manufacturing the transistors, and electronic devices including the transistors

A transistor may include a light-blocking layer that blocks light incident on a channel layer. The light-blocking layer may include a carbon-based material. The carbon-based material may include graphene oxide, graphite oxide, graphene or carbon nanotube (CNT). The light-blocking layer may be between a gate and at least one of the channel layer, a source and a drain.

Transistors and electronic devices including the transistors

According to example embodiments, a thin film transistor (TFT) includes a channel layer including zinc, nitrogen, and oxygen; an etch stop layer on the channel layer; source and drain electrodes respectively contacting both ends of the channel layer; a gate electrode corresponding to the channel layer; and a gate insulating layer between the channel layer and the gate electrode. The etch stop layer includes fluorine. The channel layer may be on the gate electrode.

Thin film transistor and method of manufacturing the same

A transistor includes a channel layer including an oxynitride semiconductor doped with at least one of hafnium (Hf) and zirconium (Zr), a source on one side portion of the channel layer and a drain on another side portion of the channel layer, a gate corresponding to the channel layer, and a gate insulation layer between the channel layer and the gate.

Oxynitride channel layer, transistor including the same and method of manufacturing the same

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Yongin-si, South Korea

Myung-Kwan Ryu