Samsung Electronics Co., Ltd.

Myung-Jung Pyo

Byoung-Moon Yoon

Kyung-Hyun Kim

Hyo-Jung Kim

Jong-Heun Lim

Ki-Hyun Hwang

Han-Mei Choi

Won-Jun Lee

Seung-Ho Park

Joon-Sang Park

Dong-Chul Yoo

Chan-Jin Park

Ki-Hyung Ko

Jun-Youl Yang

Chang-Sup Mun

Dae-hong Eom

Methods of manufacturing semiconductor devices include forming an integrated structure and a first stopping layer pattern in a first region. A first insulating interlayer and a second stopping layer are formed. A second preliminary insulating interlayer is formed by partially etching the second stopping layer and the first insulating interlayer in the first region. A first polishing is performed to remove a protruding portion. A second polishing is performed to expose the first and second stopping layer patterns.

Methods of manufacturing semiconductor devices

A first insulating interlayer is formed on a substrate including first and second regions. The first insulating interlayer has top surface, a height of which is greater in the first region than in the second region. A first planarization stop layer and a second insulating interlayer are formed. The second insulating interlayer is planarized until the first planarization stop layer is exposed. The first planarization stop layer and the first and second insulating interlayers in the second region are removed to expose the substrate. A lower mold structure including first insulation layer patterns, first sacrificial layer patterns and a second planarization stop layer pattern is formed. The first insulation layer patterns and the first sacrificial layer patterns are alternately and repeatedly formed on the substrate, and a second planarization stop layer pattern is formed on the first insulation layer pattern.

Multiple mold structure methods of manufacturing vertical memory devices

In an etching method, a thin layer is formed on a first surface of a first substrate doped with first impurities having a first doping concentration. The thin layer is doped with second impurities having a second doping concentration lower than the first doping concentration. A second substrate is formed on the thin layer. A second surface of the first substrate is polished. The polished first substrate is cleaned using a cleaning solution including ammonia and deionized water. The cleaned first substrate is etched to expose the thin layer.

Etching methods and methods of manufacturing a CMOS image sensor using the same

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Hwaseong-si, South Korea

Myung-Jung Pyo