Samsung Electronics Co., Ltd.

Industry-academic Cooperation Foundation

Myung-jong Kim

In-gyu Baek

Yong-Ho Ha

In-Seok Yeo

Dae-Hong Ko

Mann-Ho Cho

Sang-Yeon Kim

Hyun-Chul Sohn

A nonvolatile memory cell includes first and second electrodes and a data storage layer extending between the first and second electrodes. An oxygen diffusion barrier layer is provided, which extends between the data storage layer and the first electrode. An oxygen gettering layer is also provided, which extends between the oxygen diffusion barrier layer and the data storage layer. The oxygen diffusion barrier layer includes aluminum oxide, the oxygen gettering layer includes titanium, the data storage layer includes a metal oxide, such as magnesium oxide, and at least one of the first and second electrodes includes a material selected from a group consisting of tungsten, polysilicon, aluminum, titanium nitride silicide and conductive nitrides.

Nonvolatile memory cells having oxygen diffusion barrier layers therein

Example methods and example embodiments include methods of fabricating semiconductor devices and semiconductor devices fabricated by the same. Example fabricating methods include forming a first nanowire, oxidizing the first nanowire to form a first nanostructure including a first insulator and a second nanowire, and oxidizing the second nanowire to form a second nanostructure including a second insulator and nanodots. Example semiconductor devices include nanostructures including nanodots and nanostructures providing storage nodes in memory devices.

Methods of fabricating semiconductor devices and semiconductor devices fabricated by the same

Growing community of inventors

Hwaseong-si, South Korea

Myung-jong Kim