Samsung Electronics Co., Ltd.

Hyundai Motor Company

Dongbu Anam Semiconductor, Inc.

Myung-jin Jung

Jin-hwan Park

Kyung-ho Kim

Ji-soo Kim

Tae-sun Chung

Bong-jun Choi

Chae-won Yu

Chan-sol Kim

Pil-sung Kang

So-jeong Lee

Ji-Hyun In

Hee-Joon An

Hyung-seok Park

Hae-Ryun Sohn

An operating method of a host includes receiving a request for secure deletion of a first file stored in a storage system, providing an invalidation command to the storage system for invalidating data of the first file, providing an erase command to the storage system for erasing invalidated data included in the storage system, and performing a deletion operation, which is executable on an operating system of the host, on the first file which is deleted by the erase command.

Host and storage system for securely deleting files and operating method of the host

Passenger car

A method for minimizing the degradation of performance upon accessing a flash memory using a logical-physical mapping scheme, and a method for efficiently storing and managing information on logical-physical mapping in a flash memory. A method for writing data in a flash memory includes determining whether a sector is empty in a physical page having a most recently written logical page number of data to be written, the offset of the sector matching that of the data to be written; if the sector is empty, writing the data in the sector to the physical page; and if the sector is not empty, selecting an empty physical page to write the data to a sector in the selected empty physical page of which the offset matches that of the data to be written and writing a logical page number for the data to the selected empty physical page.

Address mapping method and mapping information managing method for flash memory, and flash memory using the same

A mapping algorithm for efficient access to a flash memory, wherein block state information that is changed through logical operations required by a processor is written in the flash memory according to a predetermined state transition algorithm and the changed information is referred to upon read/write operations. A mapping control apparatus for a flash memory according to the present invention includes a flash memory having regions divided on a block basis and containing block state information indicating the state of each block, each block including a predetermined number of sectors; and a processor for determining a sector on which a predetermined logical operation is to be performed based on the block state information and updating the block state information according to a predetermined state transition algorithm, when the logical operation is required for the flash memory.

Flash memory and mapping control apparatus and method for flash memory

The present invention relates to a flash memory and a method for manufacturing the same, capable of minimizing resistance of the common source line in the flash memory cell manufacturing process. In the memory cell manufacturing method according to the embodiment of the present invention, trench lines are continuously formed on a semiconductor substrate, and gate oxide film lines are formed on the semiconductor substrate except at the trench lines. Sequentially, gate lines vertical with the trench lines are formed on the trench lines and the gate oxide film lines, and the dielectric material of the trench line and the gate dielectric film between adjacent gate lines is removed, and a conductive film of Ti/TiN or Co/Ti/TiN is deposited on the common source region, and then a silicide is formed on the common source region by means of annealing.

Flash memory cell and method for manufacturing the same

Growing community of inventors

Seoul, South Korea

Myung-jin Jung