Korea Institute of Science and Technology

Other

Vericom Co., Ltd.

Myung Hwan Oh

Byeong Kwon Ju

Yun Hi Lee

Dong Ky Shin

Tae Kyung Kim

Nam Yang Lee

Yunki Kim

Seong Jae Jeung

Dong Ho Kim

Myung Seop Kim

Yong-Moo Kwon

Kyung Jae Lee

Nam Yoon Lee

Kwang Duk Ahn

Sang Youl Yoon

Kwang Nam Kang

Hyo Sup Lee

Byung Yong Yu

Chong Hong Pyun

Tae Suk Park

In J Chung

Man Ho Song

Keun Ha Koh

Woo Beom Choi

Young Dae Ju

Task Sang Hahn

Jin Ho Sunwoo

Cheon Su Kang

Chun Woo Lee

Tae Ho Yeom

Sang Bong Kwon

Taek Sang Hahn

Disclosed is an orthodontic composite, comprising: an orthodontic member which has a tube shape, a hollow polygonal prism shape, a hollow truncated polygonal pyramid shape, a hollow truncated cone shape, or a funnel shape; and an orthodontic wire that is inserted into the hollow portion of the orthodontic member, wherein the orthodontic member includes a water-soluble or biodegradable material. Thereby, the orthodontic composite of the present invention making it simple to perform orthodontic treatment by attaching the orthodontic composite.

Orthodontic composite and method for preparing same

Disclosed is an orthodontic member, having a tube shape, a hollow polygonal prism shape, a hollow truncated polygonal pyramid shape, a hollow truncated cone shape, or a funnel shape, and including a water-soluble or biodegradable material, wherein the orthodontic member into which a wire is inserted is attached to the teeth, thereby making it simple to perform orthodontic treatment.

Orthodontic member and method for producing same

Disclosed is a wire-type corona charger having a wire electrode disposed between ground electrode plates. The wire electrode is supported by the ends of the plurality of wire electrode supporters which are so arranged that their ends have a curvature equal to arcuately-shaped upper edge of the ground electrode plates. The curvature coincides with one of the curvatures of the horizontal axis and the vertical axis of the interior surface of the panel faceplate, while the charger is pivoted along the other curvature of the faceplate. The charger can uniformly charge the photoconductive layer and improves the charging efficiency.

Wire type corona charger for electrophotographical manufacturing of CRTs

A field emission display and a method for fabricating the same are disclosed. The method includes the steps of: forming a silicon mold; growing a diamond on the silicon mold, to form a diamond tip; forming a conductive layer on the diamond tip; bonding a first substrate to the conductive layer; removing the silicon mold; forming a gate insulating layer and gate electrode on the diamond tip; and etching the gate electrode and gate insulating layer to expose an electron emission portion of the tip, and thereby form a gate hole. By doing so, the operation voltage is reduced, compared with the diode-type display, and high-responsibility field emission display can be realized by applying (-) or (+) voltage to the gate electrode.

Method for fabricating a field emission display

In the present invention, the vacuum packaging of a field emission display (FED) is achieved in a high vacuum apparatus using a glass-to-glass bonding. The apparatus may eliminate the problems encountered in the conventional art in which a ventilation tube is used, so that vacuum degree of the interior of panels of the FED is affected (decreased) by the gases generated in sealing the ventilation tube. Furthermore, in the prior art, a part of the ventilation tube remains on the panel of the FED for thereby increasing the thickness of the panels, and the ventilating of gases is not effectively performed by the extension of the tube and a big size hole. The vacuum packaging apparatus of the FED and method therefor according to the present invention are capable of more effectively packaging FED by implementing a glass-to-glass bonding by ventilating gases from the interior of the panel of the FED in a manner of a high temperature ventilation in a high vacuum apparatus, contacting a glass substrate piece with a hole formed in the panel of the FED and applying a DC voltage thereto. Therefore, it is possible to easily implement a vacuum packaging of the FED and vacuum degree of the interior of the FED panel may be increased.

Vacuum packaging apparatus for a field emission display and a method

A field emission display device and a fabrication method thereof, by which a vacuum sealing can be simple, and electric and optical characteristics between pixels can be improved by achieving a device package by means of a junction between substrates in vacuum without a spacer, which includes a semiconductor substrate having a groove having a predetermined depth; an n-well formed on the semiconductor substrate under the bottom of the groove; an emitter formed on the n-well; an insulation film formed on a portion of the semiconductor substrate, in which the groove is not formed; a transparent electrode bonded to the upper portion of the insulation film; a light emitting layer arranged on the upper portion of the emitter and formed within the transparent electrode; and a glass substrate formed on the transparent electrode.

Field emission display device

An improved field emission display device fabrication method which adopts both a silicon wafer direct bonding method and a mold method so as to fabricate an improved field emission display device, which includes the steps of a first step which forms a tip array by a molding method; and a second step which bonds the tip array to a second semiconductor substrate.

Field emission display device fabrication method

An improved white-light emitting electroluminescent display device and a manufacturing method thereof capable of advantageously generating a light having a red, blue, and green wave lengths within a unique material, which includes a substrate; a lower electrode disposed on the substrate; a first dielectric layer disposed on the lower electrode; a ZnS:Pr,Mn light-emitting layer disposed on the first dielectric layer; a second dielectric layer; and an upper electrode disposed on the second dielectric layer. In addition, a fabrication method thereof includes the steps of forming a first dielectric layer on an upper electrode; forming a light-emitting layer on the first dielectric layer by depositing a ZnS:Pr,Mn luminescent material made of Pr of 1.4.about.0.5 mol % and Mn of 0.1.about.0.01 mol % on a ZnS host material; forming a second dielectric layer on the light-emitting layer; and forming a lower electrode on the second dielectric layer.

White-light emitting electroluminescent display device and manufacturing

An improved white-lite emitting electroluminescent display capable of emitting a light having a red, blue, and green wave length in a single material and having a buffer layer of Si.sub.x N.sub.y between a dielectric layer of BaTa.sub.2 O.sub.6 and a light-emitting layer, which includes a substrate; a lower dielectric layer of Bata.sub.2 O.sub.6 formed on a transparent electrode; a light-emitting layer of SrS:Pr,F formed on the lower dielectric layer; a buffer layer of Si.sub.x N.sub.y formed on the light-emitting layer; a upper dielectric layer of BaTa.sub.2 O.sub.6 formed on the buffer layer; and an upper electrode formed on the upper dielectric layer, and further includes the steps of a first step which forms a lower electrode on a substrate; a second step which forms a light-emitting layer of SrS:Pr.F on a lower dielectric layer; a third step which forms a buffer layer of Si.sub.x N.sub.y on the light-emitting layer; a fourth step which forms a upper dielectric layer of BaTa.sub.2 O.sub.6 on the buffer layer; and a fifth step which deposits an aluminum electrode on the upper dielectric layer.

White-light emitting electroluminescent display and fabricating method

A method for fabricating a luminant for a field emission display fabricated through PVD is disclosed. The method includes the steps of: forming a ZnO:Zn luminescent thin film on a glass substrate through PVD; and forming a conductive thin film on the ZnO:Zn luminescent thin film, to thereby change the luminescence threshold, brightness and luminescent color suitable for the operation characteristics of the emitter in a predetermined range, by controlling the thickness of the luminescent layer, temperature and ambient of heat treatment of the luminant.

Luminant for field emission display fabricated through physical vapor

A micro-tip for emitting an electric field and a method for fabricating the same are disclosed. The method includes the steps of: forming a silicon mould; forming a functional layer on the silicon mould, and then forming a tip on the functional layer; forming a conductive thin film on one side of the tip; bonding a substrate to the conductive thin film; and removing the silicon mould, to thereby obtain the structural advantages of the semiconductor tip as well as the advantages of the material for functional layer, and realize the micro-tip for an emitting electric field having high reliability.

Micro-tip for emitting electric field and method for fabricating the same

A fabrication method for a test piece for observing non-contact regions in a pair of bonded semiconductor substrates includes thinning one substrate of a pair of bonded semiconductor substrates, grade-polishing the thinned semiconductor substrate and the bonded semiconductor substrates to have a predetermined graded angle relative their bonded surfaces, and dry-etching an area around the bonded surfaces of the grade-polished semiconductor substrates to reveal faults. With the thusly fabricated test piece, micro non-contact regions can be simply observed and crystal faults existing on the bonded surfaces as well as in the micro non-contact regions can be easily detected.

Fabrication method of semiconductor test piece

A circuit for driving an AC TFEL device which is a complete solid luminescence element, capable of generating positive and negative AC voltages from a single DC voltage by utilizing a relative potential difference and thereby providing a compact voltage supply unit required for driving the AC TFEL device. A circuit is also provided which is constructed to reduce the number of operating voltages required in the refresh drive method and the scan inversion symmetric drive method upon driving the matrix of the AC TFEL device by using a relative potential generating circuit. By employing such a circuit, it is possible to simply provide a voltage supply circuit required in a portable display system using the AC TFEL device and supply a voltage required for the refresh driving and the scanning sequence inversion driving by using only one clock control signal.

Circuit for driving alternating current thin film electroluminescence

A silicon fusion bonding method and apparatus for bonding silicon substrates in wet oxygen atmosphere. The method comprises a stabilizing step of the silicon substrates, which has been processed in a pre-process, in the wet oxygen atmosphere, a primarily bonding step of the silicon substrates to each other and a heat-treating step of the silicon substrates at a high temperature in the wet oxygen atmosphere in order to remove micro-gaps from a junction interface by virtue of filling-up effect of micro-gaps by interfacial oxide growing. The present apparatus includes a hollow quartz tub having a stabilization part and a heat-treating part, a flask for providing the wet oxygen atmosphere for the quartz tub, a heater for heating the heat-treating part of the quartz tub and a movable carrier for moving between the stabilization and heat-treating parts of the quartz tub as carrying thereon the silicon substrates in such a manner that the silicon substrates are spaced apart from each other with a quartz spacer interposed therebetween when they are stabilized and come into contact with each other by removing of the quartz spacer when they are heat-treated.

Method and apparatus for silicon fusion bonding of silicon substrates

A method of producing a zinc oxide varistor for high voltage which is a voltage-current non-linear type of resistor including zinc oxide as the major ingredient and bismuth oxide or manganese dioxide as additives for use with a circuit protector and gapless arrester. The method of the invention includes sintering a zinc oxide composition lacking bismuth oxide at 1200.degree.-1350.degree. C. under conditions and for a period of time effective to form a primary sintered body, heat-treating a primary sintered body coated with an amount of metal oxide paste containing mostly bismuth oxide at a temperature of 1000.degree.-1200.degree. C. for a period of time effective to diffuse the metal oxide paste to the grain boundaries of the zinc oxide grains.

Growing community of inventors

Seoul, South Korea

Myung Hwan Oh