Samsung Display Co., Ltd.

Enf Technology Co., Ltd.

Innochips Technology Co., Ltd.

Lg Electronics Inc.

Lg Philips Lcd Co., Inc.

Lg Hausys, Ltd.

Lg Display Co., Ltd.

Moda-innochips Co., Ltd.

Samsung Electronics Co., Ltd.

Hyundai Dymos Inc.

Inzicontrols Co., Ltd.

Myung Ho Lee

Myung Geun Song

Han Sang Lee

Tae Jin Kim

Gyeong Tae Kim

Jong Soo Kim

Hui Nam

Jin Sung Kim

Jong In Shin

Yong Hee Han

Jae Woo Ryu

In Kil Park

Suk Ho Jang

Tae Hyung Noh

Ki Hyun Pyun

Tae Ho Kim

Sang Su Han

Joon Suk Baik

Bon Seog Gu

Seung Jun Lee

Se Hyuk Park

Kyun Ho Kim

Chang Yeon Kim

Jung-taek Kim

In Hwan Kim

Do Hyung Kim

Donghyun Kim

Seung-Jun Lee

Ho Sub Lim

Won Jung Kim

Seong-Moon Jung

Sung-Seock Hwang

Dong Hoon Lee

Hak Soo Kim

Jae Yong Park

Sung Ki Kim

Hyun-Jae Kim

Jung-Min Oh

Yong Min Ha

Hyun Jae Kim

Juhn Suk Yoo

Hae Kwan Seo

Hyosan Lee

Soojin Kim

Hoon Ju Chung

Seong Ho Baik

Ock Hee Kim

Seung Chan Byun

Ju-Hyung Lee

Myoung Seop Song

Hyeon Woo Park

In-Kil Park

Sung Yeon Cho

Tae Geun Seo

Joon Kyu Park

Seung-Min Jeon

Seong Moon Jung

Sung Seock Hwang

Jiwon Lim

Seongmoon Jung

Seung Jae Kim

Dayoung Yu

Sang Hyun Rho

Dongmin Song

Jeong Sik Oh

Gi Young Kim

Tae-Hyung Noh

Du Won Lee

Kyu Cheol Jang

Jung-Pil Han

Gyu Su Lee

Haksoo Kim

Jung Pil Han

Eun-Joo Kim

Sang Hyup Lee

Seung Min Jeon

Song Yeon Lee

Jang Woo Cho

Min Soo Lee

Jung Hun Lee

Sang Hwan Lee

Jun Hyeok Hwang

Myong Euy Lee

Jae Jung Ko

Hoon Sik Kim

Sung Jun Hong

Ho Seok Son

Woo Mi Bae

Hyo-Sun Lee

Ju Hyung Lee

Seok Hee Jeong

Jong Dae Lim

Eun Sang Cho

Eun Joo Kim

Jung Jae Oh

Hyeok Lae Park

Soo Wan Yoon

Hye Hee Lee

Hyun Mo Kang

Provided is an etchant composition for a silicon layer including: a fluoride-based compound; a nitrate-based compound; an acid mixture including a phosphoric acid-based inorganic acid and an organic acid; and a nitrosyl compound and capable of selectively etching the silicon layer with respect to a silicon oxide layer.

Etchant composition for silicon layer and etching method using the same

Provided is an etchant composition for a semiconductor substrate which may selectively etch a high-concentration doped layer of an extrinsic semiconductor, and according to the present disclosure, an etchant composition for a semiconductor substrate which, in etching an extrinsic semiconductor substrate including doped layers having different doping concentrations, may etch the high-concentration doped layer at a high selection ratio, and suppress bubble formation during an etching process to allow uniform and stable etching, an etching method using the same, and a manufacturing method of a semiconductor substrate may be provided.

Etchant composition for semiconductor substrates

Silicon etching compositions are described and may be used for selectively etching silicon with respect to a silicon insulating film. In particular, the silicon etching compositions can be used to improve the selective etching ratio of silicon from the surface of a semiconductor on which a silicone oxide film and silicon are exposed.

Etching composition

The present disclosure provides an etching composition for a metal nitride layer and an etching method of a metal nitride layer using the same, and more particularly, to an etching composition for a metal nitride layer selectively etching the metal nitride layer, an etching method of a metal nitride layer using the etching composition, and a method of manufacturing a microelectronic device, the method including an etching process performed using the etching composition.

Etching composition for metal nitride layer and etching method using the same

Provided is a laminated device. The laminated device includes: a laminate body where a plurality of sheets are laminated; a plurality of noise filter parts provided in the laminate body and each having at least one coil pattern; and a plurality of external electrodes provided outside the laminate body and connected to the plurality of noise filter parts, respectively. At least one of the plurality of noise filter parts has the number of coil patterns different from that of the rest.

Laminated device

Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be highly selectively etched as compared with a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.

Silicon nitride film etching composition and etching method using the same

Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be stably etched with a high selection ratio relative to a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.

A cleaning composition for removing post-etch or post-ash residues from a semiconductor substrate, and a cleaning method using the same are disclosed. The cleaning composition can comprise water; a fluorine compound; an alkanolamine compound; and a corrosion inhibitor. The corrosion inhibitor is a mixture of a first corrosion inhibitor and a second corrosion inhibitor. When using the cleaning composition, it is possible to efficiently remove the residues of various aspects existing on a surface of the substrate or the semiconductor device without damage to a substrate or a semiconductor device including various metal layers, insulating layers, etc. Accordingly, when a highly integrated and miniaturized semiconductor device is manufactured, it may be advantageously applied to the removal of residues generated on the surface of the substrate or the semiconductor device.

Cleaning composition and cleaning method using the same

A display device comprises a pad terminal area and a first circuit board attached to the pad terminal area. The pad terminal area comprises a first pad terminal area having a first pad terminal row of first pad terminals and a second pad terminal area having a second pad terminal row of second pad terminals. The first circuit board comprises a first film having a first lead terminal row of first lead terminals and a second film having a second lead terminal row of second lead terminals. The first lead terminals are connected to the first pad terminals, the second lead terminals are connected to the second pad terminals, an end of the second film protrudes outward from an end of the first film, and the second pad terminal area overlaps an area between the end of the first film and the end of the second film.

Display device

A power voltage generator includes a booster, a voltage sensor, a constant voltage controller and a constant current controller. The booster is configured to boost an input voltage to an output voltage based on an on-off operation of a switch. The voltage sensor is configured to generate a sensing voltage by sensing the output voltage. The constant voltage controller is configured to generate a first switching signal to control the switch by comparing the sensing voltage with a reference voltage. The constant current controller is configured to generate a gain based on a ratio of an electrode signal of the switch and a target signal by comparing the electrode signal of the switch with the target signal.

Power voltage generator and display device having the same

A display device and a driving method thereof are disclosed, and the display device includes a first pixel connected to a first data line, a first scan line, and a first power source line, emitting light in a first period, and not emitting light in a second period following the first period; a second pixel connected to a second data line, the first scan line, and the first power source line, not emitting light in the first period, and emitting light in the second period; a current sensor sensing a current flowing through the first power source line in the first period to provide a first sensing current value, and sensing the current flowing through the first power source line in the second period to provide a second sensing current value; and a memory storing a first block target current value corresponding to the first sensing current value and a second block target current value corresponding to the second sensing current value.

Display device and driving method thereof

A display device includes a display part including an organic light emitting diode (OLED) connected to a pixel circuit connected to a scan line and a sensing scan line, a signal generator configured to generate at least one display output enable (OE) signal during an image display period; and generate at least one sensing OE signal during a sensing period; and a scan driver including a display scan signal terminal connected to the scan line and a sensing scan signal terminal connected to the sensing scan line, wherein the scan driver is configured to: generate a scan signal for turning on the switching transistor in response to the display OE signal during the image display period; and generate a sensing scan signal for turning on the sensing transistor in response to the sensing OE signal during the sensing period.

Display device and method of driving the same

Growing community of inventors

Hwaseong-si, South Korea

Myung Ho Lee