Samsung Electronics Co., Ltd.

Myung-ho Kong

Mansug Kang

Heesook Park

Youngwook Park

Seonghwee Cheong

Taekjung Kim

Hee-Sook Park

Jong-myeong Lee

Jeong-Hee Park

Han-young Kim

Taek-jung Kim

Keon-seok Seo

A method of fabricating a semiconductor device includes forming a doped polysilicon layer on a substrate, forming a barrier layer on the doped polysilicon layer, forming an oxidized barrier layer by oxidizing a surface of the barrier layer, and forming a metal layer on the oxidized barrier layer.

Method of fabricating semiconductor device

A semiconductor memory device can include a first conductive line crossing over a field isolation region and crossing over an active region of the device, where the first conductive line can include a first conductive pattern being doped, a second conductive pattern, and a metal-silicon-nitride pattern between the first and second conductive patterns and can be configured to provide a contact at a lower boundary of the metal-silicon-nitride pattern with the first conductive pattern and configured to provide a diffusion barrier at an upper boundary of the metal-silicon-nitride pattern with the second conductive pattern.

Semiconductor devices including metal-silicon-nitride patterns

Growing community of inventors

Hwaseong-si, South Korea

Myung-ho Kong