Samsung Electronics Co., Ltd.

Myung Ho Jung

Jin Woo Park

Heung Jin Joo

Du Heon Song

Min Sung Song

He Jueng Lee

Kwan Yong Kim

Jong Su Kim

Chang Hoon Choi

Sung Chai Kim

Jeong Su Ha

Won Guk Seo

Young Su Ryu

In some embodiments, 3-dimensional semiconductor memory device includes a semiconductor substrate extending horizontally in a first direction and a second direction crossing the first direction. A stacked memory cell array is formed on the semiconductor substrate. The memory device further includes a separation pattern including a plurality of separation lines extending in the first direction and arranged in the second direction, and dividing the stacked memory cell array into a plurality of memory cell structures extending in the first direction and arranged in the second direction. An upper insulating layer is formed above the plurality of memory cell structures and separation lines, and a passivation layer is formed above the upper insulating layer. The passivation layer includes a plurality of first regions having a first vertical thickness. A plurality of gap regions in the passivation layer are formed between the plurality of first regions. The plurality of first regions vertically overlap the plurality of memory cell structures, and the plurality of gap regions vertically overlap the plurality of separation lines.

Semiconductor device

An inspection apparatus for a semiconductor process and a semiconductor process device, the inspection apparatus including a transferer configured to transfer a process object between a plurality of chambers; at least one line camera installed above the transferer, the at least one line camera being configured to generate an original image by capturing an image of the process object transferred by the transferer; and a controller configured to receive the original image and to perform an inspection of the process object by correcting distortion of the original image due to a change in transfer speed of the transferer.

Inspection apparatus for semiconductor process and semiconductor process device

Growing community of inventors

Hwaseong-si, South Korea

Myung Ho Jung