Globalfoundries Inc.

Myung Hee Nam

Yanxiang Liu

Jerome Ciavatti

Xiaoli He

A non-planar semiconductor structure includes a semiconductor substrate, multiple raised semiconductor structures coupled to the substrate, a drain well in each of the raised structures, and a drain in each drain well. The structure further includes an isolation region in each drain well adjacent the drain, each isolation region reaching to a top surface of the corresponding raised structure, and a conductive center gate on each raised structure, the conductive center gate covering a top surface, a front surface and a back surface thereof, and covering a portion of the isolation region opposite the drain. The isolation regions in the drain wells reaching to the raised structure top surface is a result of preserving the isolation region by covering it during fabrication with an HDP oxide to prevent partial removal.

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Watervliet, NY, United States of America

Myung Hee Nam