Samsung Electronics Co., Ltd.

Myung-hee Kim

Hye-Young Park

Yong-chan Kim

Joon-Suk Oh

Oh-kyum Kwon

Some embodiments of the present invention provide high voltage transistors including a semiconductor substrate and a device isolation film defining an active region in the semiconductor substrate. A gate electrode extends along a central portion of the active region while maintaining a predetermined width on the semiconductor substrate. A second well is formed on both sides of the gate electrode in the semiconductor substrate, and partially extends to a bottom surface of the device isolation film. The active region in the semiconductor substrate comprises a first active region disposed under the gate electrode, and separating the device isolation film and a second active region defined by the first active region and the device isolation film. Methods of manufacturing high voltage transistors are also provided.

Growing community of inventors

Gyeonggi-do, South Korea

Myung-hee Kim