Src Corporation

Hanwha Techwin Co., Ltd.

Graphene Square Inc.

Myung Hee Jung

Byung Hee Hong

Kang Hyung Kim

Kwan Sub Maeng

Su Beom Park

Chol Woo Park

Se Youn Hong

Kyung Eun Kim

Sang Jin Kim

Se Woong Cha

Youngbin Lee

Su Kang Bae

Jong-hyun Ahn

Ji Beom Yoo

Houk Jang

Se Won Cha

Byung He Hong

The present invention relates to a method for producing graphene on a face-centered cubic metal catalyst having a plane oriented in one direction, and more particularly to a method of producing graphene on a metal catalyst having the (100) or (111) crystal structure and a method of producing graphene using a catalyst metal foil having a single orientation, obtained by electroplating a metal catalyst by a pulse wave current and annealing the metal catalyst. The invention also relates to a method of producing graphene using a metal catalyst, and more particularly to a method of producing graphene, comprising the steps of: alloying a metal catalyst with an alloying element; forming step structures on the metal catalyst substrate in an atmosphere of a gas having a molecular weight of carbon; and supplying hydrocarbon and hydrogen gases to the substrate. On unidirectionally oriented metal catalyst prepared according to the present invention, graphene can be grown uniformly and epitaxially. Moreover, a method for producing graphene according to the present invention can form monolayer graphene by epitaxially growing graphene while increasing the growth rate of graphene.

Method of manufacturing graphene using metal catalyst

The present invention relates to a method for forming graphene at a low temperature, to a method for direct transfer of graphene using same, and to a graphene sheet. The method for forming graphene at a low temperature comprises supplying a carbon-source-containing gas to a metal catalyst layer for graphene growth formed on a substrate, and forming graphene at a low temperature of 500&#xb0; C. or less by means of inductively coupled plasma-chemical vapor deposition (ICP-CVD).

Method for producing graphene at a low temperature, method for direct transfer of graphene using same, and graphene sheet

Growing community of inventors

Gyeonggi-do, South Korea

Myung Hee Jung