Government of the United States of America, As Represented by the Secretary of Commerce

University System of Maryland

Myung-Gyu Kang

Fred Sharifi

Henri Lezec

Henry Lezec

A cold cathode field emission electron source capable of emission at levels comparable to thermal sources is described. Emission in excess of 6 A/cmat 7.5 V/&#x3bc;m is demonstrated in a macroscopic emitter array. The emitter has a monolithic and rigid porous semiconductor nanostructure with uniformly distributed emission sites, and is fabricated through a room temperature process which allows for control of emission properties. These electron sources can be used in a wide range of applications, including microwave electronics and x-ray imaging for medicine and security.

Cold field electron emitters based on silicon carbide structures

A cold cathode field emission electron source capable of emission at levels comparable to thermal sources is described. Emission in excess of 6 A/cmat 7.5 V/&#x3bc;m is demonstrated in a macroscopic emitter array. The emitter is comprised of a monolithic and rigid porous semiconductor nanostructure with uniformly distributed emission sites, and is fabricated through a room temperature process which allows for control of emission properties. These electron sources can be used in a wide range of applications, including microwave electronics and x-ray imaging for medicine and security.

Growing community of inventors

Gaithersburg, MD, United States of America

Myung-Gyu Kang