Samsung Electronics Co., Ltd.

Adeka Corporation

Myung-Beom Park

Jung-sik Choi

Ki-Hyeon Kim

Takashi Yamada

Youn-Joung Cho

Baik-soon Choi

Shin-ichi Tanaka

Jin-Hee Lee

Takehiro Zushi

Han-Gyul Ko

Yun-Deok Kang

Hwi-Hyeon Oh

Yuji Morishima

Choong-Yeol Kim

Hye-Young Jin

In a method of manufacturing a semiconductor device, a semiconductor substrate is prepared. Boron-containing ions are generated by reacting a borane-based compound and a halogen-containing source with each other. The borane-based compound includes boron having a mass number of 11 (B). The boron-containing ions are implanted into the semiconductor substrate to form an impurity region.

Methods of manufacturing semiconductor devices including impurity regions

A tin plating solution and a method for fabricating a semiconductor device are provided. The tin plating solution comprises tin ions supplied from a soluble tin electrode, an aliphatic sulfonic acid having a carbon number of 1 to 10, an anti-oxidant, a wetting agent, and a grain refiner that is an aromatic carbonyl compound.

Tin plating solution, tin plating equipment, and method for fabricating semiconductor device using the tin plating solution

An electroplating solution includes an aqueous electrolyte solution including water soluble copper salts, sulfide ions and chloride ions, an accelerator including an organic material having sulfur (S), the accelerator accelerating copper (Cu) reduction, a suppressor including a polyether compound, the suppressor selectively suppressing the copper reduction, and a leveler including a water soluble polymer having nitrogen that is dissolved into positive ions in the aqueous electrolyte solution.

Copper electroplating solution and copper electroplating apparatus

A copper electroplating method including dipping a substrate in a copper electroplating solution, the substrate including a seed layer; and forming a copper electroplating layer on the seed layer, wherein the copper electroplating solution includes water, a copper supply source, an electrolytic material, and a first additive, the first additive includes a compound represented by Formula 1, below: 

Copper electroplating method

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Hwaseong-si, South Korea

Myung-Beom Park