Electronics and Telecommunications Research Institute

Intellectual Discovery Co., Ltd.

Myung-Ae Chung

Jeong-Dae Suh

Ki-Bong Song

Jung-Min Cho

Eun-Jin Bae

Sung-Weon Kang

Kyung-Hwan Park

Byoung-Gun Choi

Jae-Min Kang

Kwan-Su Kim

Chang-Woo Ham

Cheol-Joo Chae

This invention relates to a radioisotope battery and a method of manufacturing the same, wherein manufacturing the radioisotope battery and shielding radiation emitted from the radioisotope Ni-63 from the outside are achieved simultaneously. This radioisotope battery includes a semiconductor layer, a seed layer formed on the semiconductor layer, a radioisotope layer formed on the seed layer, and a radiation shielding layer formed on the radioisotope layer and for shielding radiation of the radioisotope layer form the outside.

Radioisotope battery and manufacturing method thereof

A method for diagnosing Alzheimer's disease by detecting the presence of beta-amyloid in cells using a phototransistor device. Cells that potentially contain beta-amyloid are provided and labeled with a multi-protein that selectively binds to beta-amyloid if present and that includes streptavidin, biotin and polyethylene glycol connected in sequence with the streptavidin being bound to a magnetic bead and the polyethylene glycol being bound to the beta-amyloid, to provide labeled cells. A phototransistor device including a channel layer is provided and a difference in photocurrent determined corresponding to incident light measured before and after selectively fixing the labeled cells on a surface of the channel layer by applying an external magnetic field effective to attract the magnetic bead to the phototransistor device through a permanent magnet positioned below the channel. Any difference between the first and second photocurrents indicates the presence of, and optionally amount of, labeled beta-amyloid in the cells.

Method for early diagnosis of alzheimer'S disease using phototransistor

Disclosed herein is a method of fabricating a CIS or CIGS thin film, comprising:

Method of fabricating CIS or CIGS thin film

Disclosed is a method of manufacturing a thin-film light-absorbing layer using spraying, including mixing precursor solutions comprising CuCl, InCland SeC(NH)under a nitrogen atmosphere at room temperature thus preparing a mixture solution; spraying the mixture solution on a substrate and drying it, thus forming a thin film; and selenizing the thin film under a selenium atmosphere. A method of manufacturing a thin-film solar cell is also provided, which includes forming a back contact layer on a glass substrate using sputtering; forming a light-absorbing layer on the back contact layer using spraying; forming a buffer layer on the light-absorbing layer using chemical vapor deposition; forming a window layer on the buffer layer using sputtering; and forming an upper electrode layer on the window layer.

Method of manufacturing thin-film light-absorbing layer, and method of manufacturing thin-film solar cell using the same

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Daejeon, South Korea

Myung-Ae Chung