Samsung Electronics Co., Ltd.

Myun-joo Park

Byung-se So

Jae-Jun Lee

Sang-Won Lee

Tae-Sung Jung

Memory interface systems include one or more channel lines that couple a memory to a memory controller such that the channel line(s) are responsive to a terminal voltage that is independent of supply voltages for the memory and the memory controller. Because the memory interface system uses a terminal voltage that is independent of the supply voltages of the memory and the memory controller, the interface system may be unaffected by voltage differences between the memory supply voltage and the memory controller supply voltage.

Memory interface systems that couple a memory to a memory controller and are responsive to a terminal voltage that is independent of supply voltages for the memory and the memory controller

A memory system system includes a single in-line memory module (SIMM) which contains a memory device and a signal transmission line connected between the memory device and a connection terminal, and a dual in-line memory module (DIMM) which contains two memory devices and a signal transmission line connected between the two memory devices and a connection terminal. A length of the signal transmission line of the SIMM is longer than a length of the signal transmission line of the DIMM. The load of the memory device of the SIMM is less than the load of memory devices of the DIMM, and the longer length of the signal transmission line of the SIMM increases a signal delay time of the SIMM to compensate for the different loads of the SIMM and DIMM memory devices. The longer length of the signal transmission line of the SIMM may further compensate for a signal transmission line connected between the first and second sockets which receive the SIMM and DIMM, respectively.

Memory system having memory modules with different memory device loads

A semiconductor memory device includes memory modules which have memories and a data bus which transfers data to the memory modules, in which the data bus comprises a low frequency band data pass unit which removes the high frequency component of the data and sends the data to the memory modules. The low frequency band data pass unit comprises a plurality of stubs which are connected to the data bus in parallel and are formed as printed circuit board (PCB) patterns. The low frequency band data pass unit comprises a plurality of plates that are connected to the data bus in parallel and are formed as PCB patterns. The low frequency band data pass unit has a shape in which parts having a wide width and parts having a narrow width are alternately connected. Therefore, without adding a separate passive device, the semiconductor memory device reduces the high frequency noise of data transferred through a data bus such that the voltage margin of the data improves, the cost for passive devices such as capacitors, is reduced, and the process for attaching the passive devices is simplified.

Semiconductor memory device with data bus scheme for reducing high frequency noise

The semiconductor memory system includes a memory controller, N system data buses, and first through P-th memory module groups. The N system data buses are connected to the memory controller and respectively have a width of M/N bits. The first through P-th memory module groups are connected to the N system data buses and respectively have N memory modules. In each of the first through P-th memory module groups, a different one of the N system data buses is connected to each of the N memory modules, and each of the N system data buses has a data bus width of M/N bits. The first through P-th memory module groups are operated in response to first through P-th corresponding chip select signals. M is the bit-width of an entire system data bus of the semiconductor memory system. The N system data buses are wired such that data transmission times are the same from each N memory modules that operate in response to the same chip select signal to the memory controller.

Semiconductor memory system having multiple system data buses

A memory module is capable of constituting short loop-through form memory bus systems in which the length of the entire channel can be reduced. As a result, the systems are suitable for a high-speed operation, and costs for fabricating systems such as a board and a module connector can be reduced. The memory module includes a plurality of tabs located in one side of the front and in one side on the rear of the memory module, for being interconnected by a connector on a system board, a plurality of vias for connecting two different signal layers of the memory module, and a plurality of data buses extended from the tabs on the front of the memory module to the tabs on the rear of the memory module through each of the vias. At least one memory device is connected to each of the data buses. Preferably, each of the data buses is formed to be perpendicular to one side of the memory module on which the tabs are formed.

Memory module with improved data bus performance

A system board includes a control unit; connectors arranged in series in one direction and accepting a connecting means for inputting and outputting data; and signal lines connecting the control unit to the connectors and including at least one branch point, wherein sub signal lines branched off at the same branch point are equal in length and/or loads of path from the branch point to the connecting means.

System board

A memory module for use with a computer system board includes at least one memory chip connected to a bus line conductor and a terminating resistor connected to the bus line conductor. The memory module further includes a connector configured to connect the bus line conductor to bus line of the computer system board. A computer system board includes a bus line including first branch configured to connect to a first memory module and a second branch configured to connect to a second memory module. The computer system board further includes a memory controller coupled to the first and second branches of the bus line at a single pin thereof. In other embodiments, a computer system board includes a bus line having first and second branches. A first switch is operative to selectively couple a first plurality of memory modules to a first branch of a bus line of the system board. A second switch is operative to selectively couple a second plurality of memory modules to the second branch of the bus line. The system board further includes a memory controller connected to the first and second branches of the bus line at a single pin thereof.

Memory modules having integral terminating resistors and computer system boards for use with same

A memory system, which can improve the operation speed of a data bus and is suitable for widening bandwidth by extending the width of the data bus, and memory modules used for the memory system are provided. In the memory system, data buses of a first channel and data buses of a second channel are extended from a memory controller and are arranged on the left and right of a common control and address bus, respectively. Memory modules of a first group are loaded in the data buses of the first channel and memory modules of a second group are loaded in the data buses of the second channel. Also, in the memory system, the memory modules share the common control and address bus positioned in the center. Also, the memory modules are arranged so that some parts of the memory modules overlap each other and that the memory modules of the first group and the memory modules of the second group cross each other. Each of the memory modules includes a plurality of memory devices mounted on the memory module, a signal input and output portion positioned on a side of the memory module, the signal input and output portion for connecting the memory module to a connector on a system board, a buffer mounted on the memory module, and a control and address bus connected between the signal input and output portion and the buffer. The memory devices are sequentially connected to the output line of the buffer so that a signal that passed through the control and address bus is input to the respective memory devices at time intervals through the buffer.

Growing community of inventors

Incheon, South Korea

Myun-joo Park