Advanced Micro Devices Corporation

Western Digital (fremont), Inc.

Myron R Cagan

Fei Wang

Subhash Gupta

David Keating Foote

Ronald A Barr

Kenneth E Knapp

Mark David Thomas

Methods for reducing feature sizes of devices such as electromagnetic sensors are disclosed. A track width of a MR sensor is defined by a mask having an upper layer with a reduced width and a lower layer with a further reduced width. Instead of or in addition to being supported by the lower layer in the area defining the sensor, the upper layer is supported by the lower layer in areas that do not define the sensor width. In some embodiments the upper layer forms a bridge mask, supported at its ends by the lower layer, and the lower layer is completely removed over an area that will become a sensor. Also disclosed is a mask having more than two layers, with a bottom layer completely removed over the sensor area, and a middle layer undercut relative to a top layer.

Magnetoresistive sensors having submicron track widths and method of making

A microelectronic device such as a Metal-Oxide-Semiconductor (MOS) transistor is formed on a semiconductor substrate. A tungsten damascene interconnect for the device is formed using an etch stop layer of silicon nitride, silicon oxynitride or silicon oxime having a high silicon content of approximately 40% to 50% by weight. The etch stop layer has high etch selectivity relative to overlying insulator materials such as silicon dioxide, tetraethylorthosilicate (TEOS) glass and borophosphosilicate glass (BPSG). The etch stop layer also has a high index of refraction and is anti-reflective, thereby improving critical dimension control during photolithographic imaging.

Process for fabricating semiconductor device including antireflective etch stop layer

Semiconductor device including antireflective etch stop layer

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Saratoga, CA, United States of America

Myron R Cagan