Samsung Electronics Co., Ltd.

Myoungsu Son

Yoonjong Song

Gwan-Hyeob Koh

Jung Hyuk Lee

Seung Pil Ko

Shinhee Han

Gwanhyeob Koh

Kyungtae Nam

Boyoung Seo

Kiseok Suh

Junghoon Bak

A semiconductor device includes a gate structure on a substrate, source and drain contacts respectively on opposite sides of the gate structure and connected to the substrate, a magnetic tunnel junction connected to the drain contact, a first conductive line connected to the source contact, and a second conductive line connected to the first conductive line through a first via contact. The second conductive line is distal to the substrate in relation to the first conductive line. The first and second conductive lines extend in parallel along a first direction. The first and second conductive lines have widths in a second direction intersecting the first direction. The widths of the first and second conductive lines are the same. The first via contact is aligned with the source contact along a third direction perpendicular to a top surface of the substrate.

Semiconductor devices

Disclosed is a method of fabricating a magnetic memory device. The method of a fabricating a magnetic memory device includes forming an interlayer dielectric layer on a substrate, forming a sacrificial pattern in the interlayer dielectric layer, forming a magnetic tunnel junction pattern on the sacrificial pattern, after forming the magnetic tunnel junction pattern, selectively removing the sacrificial pattern to form a bottom contact region in the interlayer dielectric layer, and forming a bottom contact in the bottom contact region.

Methods of fabricating magnetic memory devices

A magnetic memory device and a method for manufacturing the magnetic memory device are disclosed. The method includes forming a first interlayer insulating layer on a substrate, forming a first conductive pattern that penetrates the first interlayer insulating layer, forming a mold insulating layer that includes first and second mold insulating layers on the first interlayer insulating layer, forming a second conductive pattern that penetrates the first and second mold insulating layers and the first interlayer insulating layer, and forming a magnetic tunnel junction pattern on the second conductive pattern. The first mold insulating layer is in contact with the first conductive pattern, and the second mold insulating layer is disposed on the first mold insulating layer.

Magnetic memory device and method for manufacturing the same

Growing community of inventors

Yongin-si, South Korea

Myoungsu Son