Samsung Electronics Co., Ltd.

Myoungki Ahn

Wookrae Kim

Jaehwang Jung

Myungjun Lee

Changhyeong Yoon

Provided is an imaging ellipsometry (IE)-based inspection method including selecting a mode from among a first mode of an IE-based inspection device having a first field of view (FOV) and a second mode of an IE-based inspection device having a second FOV, measuring an inspection target by the IE-based inspection device based on the selected mode, and determining whether the inspection target is normal based on a result of the measuring, wherein the measuring of the inspection target comprises simultaneously measuring patterns included in a plurality of cells provided in a region of the inspection target, the region corresponding to an FOV of the selected mode.

Imaging ellipsometry (IE)-based inspection method and method of fabricating semiconductor device by using IE-based inspection method

A measurement system is disclosed. A measurement system includes an illumination module, a mirror module, a stage, and a detector. The illumination module includes a light source, an optical fiber, a collimating mirror, a polarization state generator, a beam control mirror, and a relay mirror. The mirror module includes a first beam splitter and a reflective objective mirror. The beam control mirror is movable to relay light received from the polarization state generator to various positions on the relay mirror.

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Yongin-si, South Korea

Myoungki Ahn