Samsung Electronics Co., Ltd.

Cornell University

Sungkyunkwan University

Myoungho Jeong

Jooho Lee

Jeonggyu Song

Junghwa Kim

Yongsung Kim

Eunha Lee

Haeryong Kim

Kiyoung Lee

Kyooho Jung

Hyangsook Lee

Jeongil Bang

Eunsun Kim

Young-Hoon Kim

Young-Min Kim

Byunghoon Na

Woojin Lee

Changseung Lee

Kyuho Cho

Darrell G Schlom

Hyosik Mun

Craig J Fennie

Natalie M Dawley

Gerhard H Olsen

Zhe Wang

Sang-Hyeok Yang

A method for two-dimensional mapping of crystal information of a polycrystalline material may include acquiring a diffraction pattern acquired by scanning an electron beam to a polycrystalline material, generating a plurality of clusters by applying a clustering algorithm to the acquired diffraction pattern based on unsupervised learning, acquiring crystal information of the polycrystalline material by applying a parallel deep convolutional neural network (DCNN) algorithm to each of the plurality of generated clusters based on supervised learning, and generating a two-dimensional image in which the acquired crystal information is mapped.

Automated mapping method of crystalline structure and orientation of polycrystalline material with deep learning

A capacitor includes a first electrode including a first reinforcement material having a perovskite crystal structure; and a first metallic material having a perovskite crystal structure; a second electrode on the first electrode; and a dielectric layer between the first electrode and the second electrode, wherein the first metallic material has greater a greater electronegativity than that of the first reinforcement material.

Capacitor and semiconductor device including the same

Provided are dielectric thin-film structures and electronic devices including the same. The dielectric thin-film structure includes a substrate, and a dielectric layer provided on the substrate. The dielectric layer including a tetragonal crystal structure, and crystal grains including a proportion of the crystal grains preferentially oriented such that at least one of a <hk0>, <h00>, or <0k0> direction of a crystal lattice is parallel to or forms an angle of less than 45 degrees an out-of-plane orientation.

Dielectric thin-film structure and electronic device including the same

A semiconductor device and a method of manufacturing the semiconductor device are included. The method of manufacturing the semiconductor device includes forming a hafnium oxide layer on a substrate and crystallizing the hafnium oxide layer by using a hafnium cobalt oxide layer as a seed layer. According to the method of manufacturing the semiconductor device, a thin-film hafnium oxide layer may be easily crystallized.

Semiconductor device and method of manufacturing the same

Provided are dielectric thin-film structures and electronic devices including the same. The dielectric thin-film structure includes a substrate, and a dielectric layer provided on the substrate. The dielectric layer including a tetragonal crystal structure, and crystal grains including a proportion of the crystal grains preferentially oriented such that at least one of a &#x3c;hk0&#x3e;, &#x3c;h00&#x3e;, or &#x3c;0k0&#x3e; direction of a crystal lattice is parallel to or forms an angle of less than 45 degrees an out-of-plane orientation.

A thin-film structure includes a support layer and a dielectric layer on the support layer. The support layer includes a material having a lattice constant. The dielectric layer includes a compound having a Ruddlesden-Popper phase (ABX). where A and B each independently include a cation, X is an anion, and n is a natural number. The lattice constant of the material of the support layer may be less than a lattice constant of the compound.

Thin-film structure and method of manufacturing the same

Growing community of inventors

Seongnam-si, South Korea

Myoungho Jeong