Skhynix Inc.

Myoung Sub Kim

Seung Yun Lee

Hae Chan Park

Se Ho Lee

Gap Sok Do

Tae Yong Lee

Nam Kyun Park

Hyun Jeong Lee

Soo Gil Kim

Joon Seop Sim

Sung Cheoul Kim

Beom Seok Lee

Hwan Jun Zang

Ji Sun Han

Byung Jick Cho

Heon Yong Chang

Jung Won Seo

Sung Bin Hong

A method for manufacturing an electronic device including a semiconductor memory may include forming a first carbon electrode material, surface-treating the first carbon electrode material to decrease a surface roughness of the first carbon electrode material, and forming a second carbon electrode material on the treated surface of the first carbon electrode material. The second carbon electrode material may have a thickness that is greater than a thickness of the first carbon electrode material.

Electronic device and method for manufacturing electronic device

An electronic device may include a semiconductor memory. The semiconductor memory may include: a first variable resistance layer including antimony (Sb); a second variable resistance layer including antimony (Sb) with a content different from that of the first variable resistance layer, the second variable resistance layer having a crystallization speed different from that of the first variable resistance layer; and a first electrode interposed between the first variable resistance layer and the second variable resistance layer.

Electronic device and operating method of electronic device

A resistive memory device includes a memory cell array including a unit memory cell coupled between a word line and a bit line, wherein the unit memory cell includes a data storage material and a non-silicon-substrate-based type bidirectional access device coupled in series, a path setting circuit coupled between the bit line and the word line, suitable for providing a program pulse toward the bit line or the word line based on a path control signal, a forward write command, and a reverse write command, and a control unit suitable for providing a write path control signal, a forward program command, and a reverse program command based on an external command signal.

Resistive memory device and operation method thereof

A semiconductor memory apparatus and a temperature control method thereof are provided. The semiconductor memory apparatus includes a temperature adjustment unit suitable for adjusting a temperature of a memory cell, and a temperature control unit suitable for sensing a temperature of the temperature adjustment unit, comparing a sensed temperature with a reference temperature range, and controlling the temperature adjustment unit to adjust the temperature thereof within the reference temperature range based on a comparison result.

Semiconductor system including semiconductor memory apparatus and temperature control method thereof

Semiconductor memory apparatus and temperature control method thereof

A semiconductor device includes a semiconductor substrate, a plurality of pillars vertically extending from the semiconductor substrate, each pillar including a groove formed in an upper surface thereof, a salicide layer formed to cover the upper surface and a lateral circumference of an upper end of each pillar and a lower electrode formed to cover an upper surface and a lateral surface of the salicide layer.

Semiconductor device and method for manufacturing the same

A resistive memory device capable of preventing disturbance is provided. The resistive memory device includes a lower electrode formed on a semiconductor substrate, a variable resistor disposed on the lower electrode, an upper electrode disposed on the variable resistor, and an interlayer insulating layer configured to insulate the variable resistor. The interlayer insulating layer may include an air-gap area in at least a portion thereof.

Resistive memory device capable of preventing disturbance and method for manufacturing the same

A semiconductor integrated circuit device, a method of manufacturing the same, and a method of driving the same are provided. The device includes a semiconductor substrate, an upper electrode extending from a surface of the semiconductor substrate; a plurality of switching structures extending from both sidewalls of the upper electrode in a direction parallel to the surface of the semiconductor substrate, and a phase-change material layer disposed between the plurality of switching structures and the upper electrode.

Semiconductor integrated circuit device, method of manufacturing the same, and method of driving the same

Semiconductor intergrated circuit device, method of manufacturing the same, and method of driving the same

A phase change memory device includes a silicon substrate having a bar-type active region and an N-type impurity region formed in a surface of the active region. A first insulation layer is formed on the silicon substrate, and the first insulation layer includes a plurality of first contact holes and second contact holes. PN diodes are formed in the first contact holes. Heat sinks are formed in the first contact holes on the PN diodes, and contact plugs fill the second contact holes. A second insulation layer having third contact holes is formed on the first insulation layer. Heaters fill the third contact holes. A stack pattern of a phase change layer and a top electrode is formed to contact the heaters. The heat sink quickly cools heat transferred from the heater to the phase change layer.

Growing community of inventors

Gyeonggi-do, South Korea

Myoung Sub Kim