Samsung Electronics Co., Ltd.

Lg Display Co., Ltd.

Myoung-Soo Lee

Jin-Wuk Kim

Soon-Sung Yoo

Byung-Geol Kim

Byung-Uk Kim

Sung-Hee Kim

Byong-Hoo Kim

Ki-Beom Lee

Seung-Hyup Shin

Chan-Uk Jeon

Hee-Bom Kim

Suk-Jong Bae

Jun-Yong Song

Young-Su Sung

Sun-Hee Lee

Jun-Youg Song

An organic light emitting diode (OLED) display device including a substrate having a display region and a non-display region surrounding the display region; an OLED on the substrate in the display region; an encapsulation substrate bonded to the substrate via an adhesive layer such that the encapsulation substrate and the substrate face each other; and a step-difference compensation portion in the non-display region and configured to compensate for a step difference between the display region and the non-display region.

Organic light emitting diode display device

Disclosed are an ink composition for an imprint lithography and a roll printing, wherein in forming patterns of the LCD device using the imprint lithography and the roll printing, an ink composition with high thermal resistance, consisting of polymer resin and additive both endurable even at a high temperature is used to form fine patterns with constantly maintaining pattern linewidths and line intervals, and wherein the ink composition is endurable even at a high temperature of 90-250&#xb0; C.

Ink composition for imprint lithography and roll printing

A method for inspecting a uniformity of CD (CD) of a photo mask pattern increases a production yield. The method obtains a CD by precisely measuring a photo mask by using, an electron microscope. Then, a measurement image having, a plurality of patterns formed in the photo mask is obtained by photographing the photo mask at a high speed through an optical microscope. A gray level based on the CD is calculated by capturing just a pattern area in the measurement image, and an estimated value and a correlation coefficient is obtained, when an open density of the measurement image is relatively low. Accordingly, a uniformity of CD can be confirmed more clearly in a measurement of high speed for a measurement image having a relatively low open density.

Method for inspecting critical dimension uniformity at high speed measurement

Disclosed are an ink composition and a method for fabricating a liquid crystal display (LCD) device using the same, wherein in forming patterns of the LCD device using an imprint lithography and a roll printing, an ink composition with high thermal resistance, consisting of polymer resin and additive both endurable even at a high temperature is used to form fine patterns with constantly maintaining pattern linewidths and line intervals, the ink composition consisting of 5-45% by weight of polymer resin, 5-45% by weight of additive added to retain thermal stability, and 50-90% by weight of organic solvent, wherein the ink composition is endurable even at a high temperature of 90-250&#xb0; C.

Ink composition and method of fabricating liquid crystal display device using the same

Disclosed is an electrostatic chuck with a temperature sensing unit, exposure equipment having the electrostatic chuck, and a method of detecting temperature on photomask surfaces. The temperature sensing unit and method of detecting temperature may include obtaining reflectance of a photomask using a multi-wavelength interferometer and determining a temperature on the photomask based on the reflectance.

Electrostatic chuck with temperature sensing unit, exposure equipment having the same, and method of detecting temperature from photomask

Provided are equipment and a method for measuring a transmittance of a photomask. The system includes an acoustic optical deflector (AOD) substrate interposed between a light source and the photomask. The AOD is adapted to deflect a laser beam to an oblique incidence angle with respect to a surface of the photomask. A radio frequency (RF) signal source is coupled with the AOD substrate. Varying the frequency of the signal applied to the AOD substrate acts to change the refractive degree of the substrate, thereby changing an angle of deflection of the incident laser beam. A photodetector is positioned to receive the laser beam passing through the photomask and is adapted to measure an intensity of the laser beam which has penetrated the photomask. As a result, a transmittance of the photomask can be measured under off axis illumination (OAI).

Equipment and method for measuring transmittance of photomask under off axis illumination

An embodiment includes a method of correcting deviations of critical dimensions of patterns formed on a wafer in an extreme ultraviolet lithography (EUVL) process. The embodiment includes preparing a reflection photo mask having a reflection layer and absorption patterns that are formed on the reflection layer to define reflection regions therebetween. An exposure process is performed using the reflection photo mask, thereby forming the patterns on the wafer. Critical dimensions of the patterns are measured. A reference critical dimension is set based on the measured critical dimensions of the patterns. Critical dimension deviations are determined by comparing the measured critical dimensions of the patterns with the reference critical dimension. Energy beams having energies corresponding to the critical dimension deviations are locally irradiated onto the reflection layer, thus locally varying the thickness of the reflection layer.

Growing community of inventors

Gyeonggi-do, South Korea

Myoung-Soo Lee