Samsung Electronics Co., Ltd.

Myoung-Ok Han

Kwang-Shin Lim

Seung-Ki Chae

Jung-Dae Park

Pil-kwon Jun

Yang-Koo Lee

Tae-Hyo Choi

Se-Yeon Kim

Sang-Mun Chon

Pil-Kwon Jun

Sang-Mi Lee

Yong-Kyun Ko

In-Hoi Doh

A composition for removing a photoresist includes about 5 to about 20 percent by weight of an alcoholamide compound, about 15 to about 60 percent by weight of a polar aprotic solvent, about 0.1 to about 6 percent by weight of an additive, and pure water. The alcoholamide compound is chemically structured as follows: where Ris a hydroxyl group or a hydroxyalkyl group, and Ris a hydrogen atom or a hydroxyalkyl group.

Composition for removing a photoresist, method of preparing the composition, method of removing a photoresist and method of manufacturing a semiconductor device using the composition

An exemplary etching composition includes about 0.1 to 8% by weight of hydrogen fluoride, about 10 to 25% by weight of ammonium fluoride, about 0.0001 to 3% by weight of a non-ionic polymer surfactant, and water. Using the composition in a wet etching process, an oxide layer may be selectively removed while a pattern or storage electrode including polysilicon may be effectively passivated. The oxide layer may be removed with a high etching selectivity, while at the same time minimizing damage to the polysilicon layer.

Etching composition, method of preparing the same, method of etching an oxide film, and method of manufacturing a semiconductor device

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Suwon-si, South Korea

Myoung-Ok Han