Seoul Viosys Co., Ltd.

Myoung Hak Yang

Jong Min Jang

Chang Yeon Kim

Seom Geun Lee

Yeo Jin Yoon

Se Hee Oh

Mae Yi Kim

So Ra Lee

Chan Seob Shin

Jae Kwon Kim

Jin Young Lee

Jacob J Richardson

Keum Ju Lee

Evan C O'Hara

A display device including a base substrate having a front surface and a rear surface, and including a first recess portion recessed from the front surface, a plurality of outer electrodes disposed on the base substrate, a light emitting device disposed in the first recess portion and configured to emit light in a direction away from the base substrate, the light emitting device including a light emitting structure electrically connected to the outer electrodes.

Light emitting device package and display device having the same

A light emitting device including a board, a first stacked structure configured to emit light having a first wavelength, a second stacked structure configured to emit light having a second wavelength, a third stacked structure configured to emit light having a third wavelength, a first connection electrode electrically connected to the first stacked structure, the second stacked structure, and the third stacked structure, and a protection material covering at least a portion of the first connection electrode, in which each of the first, second, and third stacked structures is configured to selectively emit light while being connected to the first connection electrode, and the protection material is configured to transmit at least 50% of light having the first wavelength, light having the second wavelength, and light having the third wavelength upon operation of each of the first, second, and third stacked structures.

LED chip and manufacturing method of the same

A light emitting chip including a first LED sub-unit, a second LED sub-unit disposed on the first LED sub-unit, a third LED sub-unit disposed on the second LED sub-unit, a first bonding layer interposed between the first and second LED sub-units, a second bonding layer interposed between second and third LED sub-units, and a first connection electrode electrically connected to and overlapping at least one of the first, second, and third LED sub-units, the first connection electrode having first and second opposing side surfaces, the first side surface having a first length and the second side surface having a second length, in which the difference in length between the first side surface and the second side surface of the first connection electrode is greater than a thickness of at least one of the LED sub-units.

A light emitting device includes a first light emitting part including a first n-type semiconductor layer, and a first mesa structure including a first active layer, a first p-type semiconductor layer, and a first transparent electrode vertically stacked one over another and exposing a portion of a first surface of the first n-type semiconductor layer, a second light emitting part spaced apart from the first mesa structure, and including a second n-type semiconductor layer, a second active layer, a second p-type semiconductor layer, and a second transparent electrode and exposing a portion of a first surface of the second n-type semiconductor layer, and a first bonding layer on which the first and second light emitting parts are disposed and electrically coupling the first n-type semiconductor layer and the second n-type semiconductor layer to each other.

Light emitting device

A light emitting package includes a first LED sub-unit having first and second opposed surfaces, a second LED sub-unit disposed on the second surface of the first LED sub-unit, a third LED sub-unit disposed on the second LED sub-unit, a plurality of connection electrodes having side surfaces and electrically connected to at least one of the LED sub-units, the connection electrodes covering a side surface of at least one of the LED sub-units, a first passivation layer surrounding at least the sides surfaces of the connection electrodes, the first passivation layer exposing at least a portion of the first surface of the first LED sub-unit, a substrate having first and second opposed surfaces, with the first surface of the substrate facing the LED sub-units, and a first electrode disposed on the first surface of the substrate and connected to at least one of the connection electrodes.

LED chip package and manufacturing method of the same

A light emitting chip including a first LED sub-unit, a second LED sub-unit disposed on the first LED sub-unit, a third LED sub-unit disposed on the second LED sub-unit, a passivation layer disposed on the third LED sub-unit, and a first connection electrode electrically connected to at least one of the first, second, and third LED sub-units, in which the first connection electrode and the third LED sub-unit form a first angle defined between an upper surface of the third LED sub-unit and an inner surface of the first connection electrode that is less than about 80&#xb0;.

A method of manufacturing a light emitting device including forming first light emitting parts on a first substrate, the first light emitting part including a first n-type semiconductor layer and a first mesa structure including a first active layer, a first p-type semiconductor layer, and a first electrode and exposing a portion of the first n-type semiconductor layer, forming second light emitting parts on a second substrate, the second light emitting part including a second n-type semiconductor layer and a second mesa structure including a second active layer, a second p-type semiconductor layer, and a second electrode and exposing a portion of the second n-type semiconductor layer, attaching a first removable carrier onto the second light emitting parts and enclosing the second light emitting parts, removing the second substrate from the second light emitting parts, and bonding the second light emitting parts to the first light emitting parts.

A light emitting device package including a base substrate having a front surface and a rear surface, and including a first recess portion recessed from the front surface, a plurality of outer electrodes disposed on the front surface, a light emitting device disposed in the first recess portion and configured to emit light in a direction away from the base substrate, and including a substrate, a light emitting structure disposed on the substrate, and a plurality of bump electrodes disposed on the substrate, and a plurality of connection electrodes connecting the light emitting device to the outer electrodes, in which an upper surface of the bump electrodes and an upper surface of the outer electrodes are disposed on substantially the same plane, and each of the connection electrodes is disposed on one of the bump electrodes and one of the outer electrodes that are adjacent to each other.

A light emitting device including a first light emitting part including a first n-type semiconductor layer, and a first mesa structure including a first active layer, a first p-type semiconductor layer, and a first transparent electrode vertically stacked one over another and exposing a portion of a first surface the first n-type semiconductor layer, a second light emitting part disposed on the exposed portion of the first n-type semiconductor layer and spaced apart from the first mesa structure, and including a second n-type semiconductor layer, a second active layer, a second p-type semiconductor layer, and a second transparent electrode, and a first bonding part bonding and electrically coupling the first n-type semiconductor layer and the second n-type semiconductor layer to each other.

A light-emitting electrode having a ZnO transparent electrode and a method for manufacturing the same are provided. A light-emitting element according to an embodiment comprises: a light-emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a ZnO transparent electrode, which is positioned on the second conductive semiconductor layer, which makes an Ohmic contact with the second conductive semiconductor layer, and which comprises monocrystalline ZnO, wherein the diffraction angle of a peak of the ZnO transparent electrode, which results from X-ray diffraction (XRD) omega 2theta (&#x3c9;2&#x3b8;) scan, is in the range of &#xb1;1% with regard to the diffraction angle of a peak of the second conductive semiconductor layer, which results from XRD &#x3c9;2&#x3b8; scan, and the FWHM of a main peak of the ZnO transparent electrode, which results from XRD omega (&#x3c9;) scan, is equal to or less than 900 arc sec.

Light-emitting element having ZnO transparent electrode and method for manufacturing same

An exemplary light emitting diode is provided to comprise: a first semiconductor layer; a mesa disposed on the first semiconductor layer and including an active layer and a second semiconductor layer disposed on the active layer; a ZnO transparent electrode disposed on the mesa; a first electrode disposed on the first semiconductor layer; and a second electrode disposed on the ZnO transparent electrode, and including a second electrode pad and at least one second electrode extending portion extending from the second electrode pad. The second electrode extending portion contacts the ZnO transparent electrode. The ZnO transparent electrode includes a first region and a second region. The first region protrudes from the top surface of the ZnO transparent electrode, includes a plurality of projecting portions arranged in a predetermined pattern, the thickness of the first region greater than the thickness of the second region.

Light emitting element including ZnO transparent electrode

Disclosed herein is a light emitting diode chip having ESD protection. An exemplary embodiment provides a flip-chip type light emitting diode chip, which includes a light emitting diode part aligned on a substrate, and a reverse-parallel diode part disposed on the substrate and connected to the light emitting diode part. Within the flip-chip type light emitting diode chip, the light emitting diode part is placed together with reverse-parallel diode part, thereby providing a light emitting diode chip exhibiting strong resistance to electrostatic discharge.

LED chip having ESD protection

A light emitting diode including a first light emitting cell and a second light emitting cell separated from each other on a substrate, a first transparent electrode layer electrically connected to the first light emitting cell, an interconnection electrically connecting the first light emitting cell to the second light emitting cell, and a first insulation layer. The first transparent electrode layer is disposed on an upper surface of the first light emitting cell and partially covers a side surface of the first light emitting cell. The first insulation layer separates the first transparent electrode layer from the side surface of the first light emitting cell, and includes an opening to expose a lower semiconductor layer of the first light emitting cell.

Growing community of inventors

Ansan-si, South Korea

Myoung Hak Yang