Samsung Display Co., Ltd.

Samsung Displayco., Ltd.

Myoung Geun Cha

Yong Su Lee

Yoon Ho Khang

Sang Gun Choi

Sang Ho Park

Hyun Jae Na

Se Hwan Yu

Chong Sup Chang

Ji Yeong Shin

Dae Ho Kim

Yu-Gwang Jeong

Dong Jo Kim

Jae Neung Kim

Sang Gab Kim

Sang Sub Kim

Ki Seok Choi

Jin Goo Jung

Joon Woo Bae

Yun Jung Oh

Se Mi Kim

Tae Wook Kang

Keun Woo Kim

Hyun Min Cho

Shin Il Choi

Kyoung Won Lee

Thanh Tien Nguyen

Dong Hwan Shim

Jong Chan Lee

Woong Hee Jeong

Jae Seob Lee

Doo Na Kim

Jae Hwan Chu

Mee Jae Kang

Hye Na Kwak

Bum Mo Sung

Gyoo Chul Jo

Young Ki Shin

Joo Hye Jung

Sang Gap Kim

A display device includes a substrate including a display area including a plurality of pixels, a peripheral area around the display area, and a bending area disposed in the peripheral area. A plurality of transistors is disposed in each pixel; a driving voltage line is disposed in the display area and transmits a driving voltage; a driving voltage transmission line is disposed in the peripheral area and is connected to the driving voltage line; and a conductive overlap layer overlaps at least one of the plurality of transistors.

Display device with overlap layer

A display device includes: a substrate; a transistor disposed on the substrate; a first electrode connected to the transistor; an emission layer disposed on the first electrode; a second electrode disposed on the emission layer; a common voltage line connected to the second electrode; and a third electrode and a fourth electrode disposed between the common voltage line and the second electrode.

Display device and manufacturing method thereof

A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

Thin film transistor and thin film transistor array panel including the same

An organic light emitting diode display includes a first thin film transistor of which a channel is formed in a polycrystalline transistor, a second thin film transistor of which a channel is formed in an oxide semiconductor layer, an organic light emitting diode electrically connected to the first thin film transistor, a storage capacitor having a first electrode and a second electrode, wherein the second electrode of the storage capacitor is electrically connected to a gate electrode of the first thin film transistor, and an overlapping layer overlapping the oxide semiconductor layer in a plan view and receiving a positive voltage. The oxide semiconductor layer is positioned higher than the gate electrode of the first thin film transistor and the second electrode of the storage capacitor.

Organic light emitting diode display device

A display apparatus includes: a base substrate; a thin film transistor and a power supply wire on the base substrate; a first electrode on the base substrate, and electrically connected to the thin film transistor; a light emitting layer and a common layer on the first electrode; and a second electrode on the common layer. The power supply wire includes: a first conductive layer; a second conductive layer on the first conductive layer; and a third conductive layer on the second conductive layer. The third conductive layer protrudes more than the second conductive layer on a side surface of the power supply wire, and the second electrode contacts a side surface of the second conductive layer.

Method of manufacturing display apparatus having second electrode that contacts second conductive layer

A display device and method of fabricating the same are provided. The display device includes a substrate and a thin-film transistor formed on the substrate. The thin-film transistor includes a lower gate conductive layer disposed on the substrate, and a lower gate insulating film disposed on the lower gate conductive layer The lower gate insulating film includes an upper surface and sidewalls. The thin-film transistor includes an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls. At least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other.

Display device and method of fabricating the same

A display device includes a first transistor including a first active layer, a first gate electrode overlapping the first active layer, a gate insulating layer between the first active layer and the first gate electrode, a first source electrode, and a first drain electrode; a second transistor including a second active layer, a second gate electrode overlapping the second active layer, a second source electrode and a second drain electrode; a capacitor including a first capacitor electrode connected to the second transistor; a lower electrode disposed under the first active layer; a connecting member connecting the first active layer to the lower electrode; and a first metal pattern contacting the connecting member and disposed on a same layer with the first gate electrode.

Display device

An OLED display and a method of manufacturing thereof are disclosed. In one aspect, the display includes a scan line formed over a substrate and configured to transfer a scan signal, a data line and a driving voltage line crossing the scan line and respectively configured to transfer a data voltage and a driving voltage, and a switching transistor electrically connected to the scan line and the data line and including a switching drain electrode configured to output the data voltage. The display also includes a driving transistor including a driving gate electrode, a driving drain electrode, and a driving source electrode electrically connected to the switching drain electrode. The display further includes a storage capacitor including a first storage electrode electrically connected to the driving gate electrode and a second storage electrode formed on the same layer as the driving voltage line.

Organic light-emitting diode display including a storage capacitive plate and a driving voltage line formed on the same layer and manufacturing method thereof

A display device including: a substrate including a main area and a sub-area at a side of the main area; a thin-film transistor on the substrate and positioned in the main area; a first insulating layer on a gate electrode of the thin-film transistor; a light-emitting element on the first insulating layer, positioned in the main area, and electrically connected to the thin-film transistor; a plurality of pads on the first insulating layer and positioned in the sub-area; and a light-blocking layer overlapping the plurality of pads and located between the substrate and the first insulating layer.

An organic light emitting diode display includes a substrate, an overlap layer on the substrate, a semiconductor layer on the overlap layer, a first gate conductor on the semiconductor layer, a second gate conductor on the first gate conductor, a data conductor on the second gate conductor, a driving transistor on the overlap layer, and an organic light emitting diode connected with the driving transistor. The driving transistor includes, in the semiconductor layer, a first electrode, a second electrode, with a channel therebetween. A gate electrode of the first gate conductor overlaps the channel. The overlap layer overlaps the channel of the driving transistor and at least a portion of the first electrode. A storage line of the second gate conductor receives a driving voltage through a driving voltage line in the data conductor. The overlap layer receives a constant voltage.

Organic light emitting diode display

Thin film transistor, thin film transistor array panel including the same, and method of manufacturing the same

Display apparatus including power supply wire that contacts second electrode and method of manufacturing the same

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Seoul, South Korea

Myoung Geun Cha