Dnf Co., Ltd.

Other

Samsung Electronics Co., Ltd.

Skc Co., Ltd.

Myong Woon Kim

Sang Ick Lee

Se Jin Jang

Sung Gi Kim

Byeong-il Yang

Sang-Do Lee

Joong Jin Park

Jeong Joo Park

Sam Dong Lee

Jang Hyeon Seok

Jong Hyun Kim

Sang Yong Jeon

Haeng Don Lim

Gun-Joo Park

A Ra Cho

Do Yeon Kim

Won Mook Chae

In Kyung Jung

Sang Jun Yim

Kang Yong Lee

Younjoung Cho

Jungsik Choi

Joo Hyeon Park

Jeong Hyeon Park

Wonwoong Chung

Tae Seok Byun

Yong Hee Kwone

Byeong Il Yang

Sung Woo Cho

Hee Yeon Jeong

Sunhye Hwang

Man Young Park

Jang Woo Seo

Hyun Gwan Kim

Ki Hoon Song

Seung Son

Mi Jeong Han

Jae Won Oh

Joon Sung Ryou

Heang Don Lim

Sang Do Lee

Provided are a method of manufacturing a ruthenium-containing thin film and a ruthenium-containing thin film manufactured therefrom, and the method of manufacturing a ruthenium-containing thin film of the present invention uses a ruthenium(0)-based hydrocarbon compound and specific reaction gas, whereby a high-purity thin film may be easily manufactured by a simple process.

Method of manufacturing ruthenium-containing thin film and ruthenium-containing thin film manufactured therefrom

Provided are a composition for depositing a silicon-containing thin film containing a bis(aminosilyl)alkylamine compound and a method for manufacturing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing the bis(aminosilyl)alkylamine compound capable of being usefully used as a precursor of the silicon-containing thin film, and a method for manufacturing a silicon-containing thin film using the same.

Composition for depositing silicon-containing thin film containing bis(aminosilyl)alkylamine compound and method for manufacturing silicon-containing thin using the same

The present invention provides a method for manufacturing a molybdenum-containing thin film and a molybdenum-containing thin film manufactured thereby. By using a molybdenum (0)-based hydrocarbon compound and a predetermined reaction gas, the method for manufacturing a molybdenum-containing thin film according to the present invention enables easy manufacturing of a highly pure thin film in a simple process.

Method for manufacturing molybdenum-containing thin film and molybdenum-containing thin film manufactured thereby

Provided are a novel metal triamine compound, a method for preparing the same, a composition for depositing a metal-containing thin film including the same, and a method for preparing a metal-containing thin film using the same. The metal triamine compound of the present invention has excellent reactivity, is thermally stable, has high volatility, and has high storage stability, and thus, it may be used as a metal-containing precursor to easily prepare a high-purity metal-containing thin film having high density.

Metal triamine compound, method for preparing the same, and composition for depositing metal-containing thin film including the same

Provided are a composition for depositing a silicon-containing thin film, containing a trisilylamine compound and a method for producing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing a trisilylamine compound which is capable of forming a silicon-containing thin film at a very high deposition rate at a low temperature to be usable as a precursor of a silicon-containing thin film and an encapsulant of a display, and a method for producing a silicon-containing thin film by using the same.

Composition for depositing silicon-containing thin film and method for producing silicon-containing thin film using the same

Composition for depositing silicon-containing thin film containing bis(aminosilyl)alkylamine compound and method for manufacturing silicon-containing thin film using the same

Provided are a silylamine compound, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing a silicon-containing thin film using the composition, and more particularly, to a silylamine compound capable of being usefully used as a precursor of a silicon-containing thin film, a composition for depositing a silicon-containing thin film containing the same, and a method for manufacturing a silicon-containing thin film using the composition.

Silylamine compound, composition for depositing silicon-containing thin film containing the same, and method for manufacturing silicon-containing thin film using the composition

Provided are a novel disilylamine compound, a method for preparing same, and a composition for depositing a silicon-containing thin film including the same. A disilylamine compound of the present invention has excellent reactivity, is thermally stable, and has high volatility, and thus, is used as a silicon-containing precursor, thereby manufacturing a high-quality silicon-containing thin film.

Disilylamine compound, method for preparing the same, and composition for depositing silicon-containing thin film including the same

An anti-glare glass of the present disclosure has excellent anti-glare properties and visibility by forming glass in which polysilazane-derived surface unevenness are applied to a glass surface without mixing a heterogeneous element, and has remarkably improved wear resistance and durability since the polysilazane is changed for glass on the glass surface by thermal treatment.

Anti-glare glass and manufacturing method therefor

The present invention relates to: a novel transition metal compound; a preparation method therefor; a composition for depositing a transition metal-containing thin film, containing the same; a transition metal-containing thin film using the composition for depositing a transition metal-containing thin film; and a method for preparing a transition metal-containing thin film. The transition metal compound of the present invention has high thermal stability, high volatility, and high storage stability, and thus a transition metal-containing thin film having high-density and high-purity can be easily prepared by using the same as a precursor.

Transition metal compound, preparation method therefor, and composition for depositing transition metal-containing thin film, containing same

Composition for depositing silicon-containing thin film including disilylamine compound and method for manufacturing silicon-containing thin film using the same

The present invention relates to a novel multipurpose polymer and a composition containing the same. The polymer and the composition of the present invention are very useful for preparing a semiconductor device having very good mechanical and optical properties.

Polymer and composition containing same

Provided are a novel trisilyl amine derivative, a method for preparing the same, and a silicon-containing thin film using the same, wherein the trisilyl amine derivative, which is a compound having thermal stability, high volatility, and high reactivity and being present in a liquid state at room temperature and under pressure where handling is possible, may form a high purity silicon-containing thin film having excellent physical and electrical properties by various deposition methods.

Trisilyl amine derivative, method for preparing the same and silicon-containing thin film using the same

A method of forming a dielectric layer includes forming a preliminary dielectric layer on a substrate using a silicon precursor and performing an energy treatment on the preliminary dielectric layer to form a dielectric layer. In the dielectric layer, a ratio of Si&#x2014;CHbonding unit to Si&#x2014;O bonding unit ranges from 0.5 to 5.

Methods of forming a low-k dielectric layer and methods of fabricating a semiconductor device using the same

Provided are a novel amino-silyl amine compound and a manufacturing method of a dielectric film containing Si&#x2014;N bond using the same. Since the amino-silyl amine compound according to the present invention, which is a thermally stable and highly volatile compound, may be treated at room temperature and used as a liquid state compound at room temperature and pressure, the present invention provides a manufacturing method of a high purity dielectric film containing a Si&#x2014;N bond even at a low temperature and plasma condition by using atomic layer deposition (PEALD).

Amino-silyl amine compound and the manufacturing method of dielectric film containing Si&#x2014;N bond by using atomic layer deposition

Growing community of inventors

Daejeon, South Korea

Myong Woon Kim