Alliance for Sustainable Energy, LLC

Georgia Tech Research Corporation

University of California

Arizona State University

Antora Energy, Inc.

Myles Aaron Steiner

Ryan Matthew France

Daniel Joseph Friedman

Asegun Sekou Henry

Mark W Wanlass

John Augustus Turner

Jeffrey J Carapella

James Luke Young

Todd Gregory Deutsch

David Levi Young

Richard R King

Angelo Mascarenhas

John David Simon

Kevin Louis Schulte

Nikhil Jain

Justin Briggs

John Franz Geisz

Tarun C Narayan

Henning Döscher

Henning Doscher

Lekhnath Bhusal

Yong Zhang

Emmett Edward Perl

Emmett E Perl

Madhan Kumar Arulanandam

Eric James Tervo

Leah Y Kuritzky

A layered window in thermophotovoltaic (TPV) devices is disclosed herein. The device may include two or more front window layers, including an outer front window layer nearest the light source that is thin and highly doped and a lower doped inner front window layer nearest a TPV absorber layer. In some embodiments, there may be additional front window layers between the outer front window layer and the inner front window layer. In some embodiments, the TPV device also may include a front contact, a back contact, and other components.

Layered window in thermophotovoltaic devices

The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500° C. and about 3000° C.

Two-junction photovoltaic devices

The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500&#xb0; C. and about 3000&#xb0; C.

The present disclosure relates to a method for manufacturing a device, where the device includes, in order, a metamorphic contact layer, a first metamorphic junction, a metamorphic tunnel junction, and a second metamorphic junction. To produce the device, the manufacturing includes, in order, a first depositing of a buffer layer onto a substrate, a second depositing of the metamorphic contact layer, a third depositing of the first metamorphic junction, a fourth depositing of the metamorphic tunnel junction, a fifth depositing of the second metamorphic junction, and the removing of the buffer layer and the substrate.

Metamorphic two-junction photovoltaic devices with removable graded buffers

The present disclosure relates to a method that includes depositing a spalling layer onto a surface that includes a substrate, depositing a device comprising a III-V material onto the spalling layer, resulting in the forming of a stack, and dividing the stack substantially at a plane positioned within the spalling layer to form a first portion that includes the substrate and a second portion that includes the PV device, where the spalling layer includes a first layer configured to provide a compressive stress and a second layer configured to provide a tensile stress, the first layer and the second layer form an interface, the dividing occurs as result of the interface, and the compressive stress and the tensile stress are strain-balanced so that a total strain within the spalling layer is approximately zero.

Device architectures having engineered stresses

Tunnel junctions for multijunction solar cells are provided. According to an aspect of the invention, a tunnel junction includes a first layer including p-type AlGaAs, a second layer including n-type GaAs, wherein the second layer is a quantum well, and a third layer including n-type AlGaAs or n-type lattice matched AlGaInP. The quantum well can be GaAs or AlxGaAs with x being more than about 40%, and lattice matched GaInAsNSb in the Eg range of from about 0.8 to about 1.4 eV.

Tunnel junctions for multijunction solar cells

The present disclosure relates to a device that includes, in order, an emitter layer, a quantum well, and a base layer, where the emitter layer has a first bandgap, the base layer has a second bandgap, and the first bandgap is different than the second bandgap by an absolute difference greater than or equal to 25 meV.

Semiconducting devices containing quantum wells

An aspect of the present disclosure is a photoelectrochemical device that includes a first cell that includes a first semiconductor alloy, a capping layer that includes a second semiconductor alloy, and a passivating layer that includes a third semiconductor alloy, where the passivating layer is positioned between the first cell and the capping layer, and at least a portion of the capping layer is configured to be in direct contact with an electrolyte.

Passivating window and capping layer for photoelectrochemical cells

Methods for forming interdigitated back contact solar cells from III-V materials are provided. According to an aspect of the invention, a method includes depositing a patterned Zn layer to cover first areas of an n-type emitter region, wherein the emitter region comprises a III-V material, and forming a passivated back contact region by counter-doping the first areas of the emitter region by diffusing Zn from the patterned Zn layer into the first areas of the emitter region, such that the first areas of the emitter region become p-type.

Methods of forming interdigitated back contact solar cells

The present disclosure relates to photoelectrochemical devices and systems for capturing the energy of electromagnetic radiation and utilizing the captured energy for electrolysis to produce hydrogen gas and oxygen gas.

Devices and methods for photoelectrochemical water splitting

High performance, high bandgap, lattice-mismatched, photovoltaic cells (), both transparent and non-transparent to sub-bandgap light, are provided as devices for use alone or in combination with other cells in split spectrum apparatus or other applications.

High performance, high bandgap, lattice-mismatched, GaInP solar cells

A method () of fabricating an LED or the active regions of an LED and an LED (). The method includes growing, depositing or otherwise providing a bottom cladding layer () of a selected semiconductor alloy with an adjusted bandgap provided by intentionally disordering the structure of the cladding layer (). A first active layer () may be grown above the bottom cladding layer () wherein the first active layer () is fabricated of the same semiconductor alloy, with however, a partially ordered structure. The first active layer () will also be fabricated to include a selected n or p type doping. The method further includes growing a second active layer () above the first active layer () where the second active layer () Is fabricated from the same semiconductor alloy.

Growing community of inventors

Denver, CO, United States of America

Myles Aaron Steiner