Samsung Electronics Co., Ltd.

Myeongcheol Kim

Cheol Kyu Kim

Gyeong-seop Kim

Sungbong Kim

Sungjin Kim

Sanghyun Lee

Donghyun Kim

Sangsoo Lee

Joon Goo Hong

Yongjin Kim

Dohyoung Kim

Jin Wook Lee

Yoonhae Kim

Yong-Joon Choi

GeumJung Seong

Hagju Cho

Hak-Sun Lee

Daeyong Kim

Yongsuk Kwon

Hyongjin Ban

Myung-Hoon Jung

Haegeon Jung

Hak-sun Lee

Sughyun Sung

Ji-Eun Han

Byungjae Park

Sooyeon Jeong

Chulsung Kim

Yoonsung Nam

Inheon Lee

Kyoungsu Park

Raja Shekar Bollam

Youngju Song

An electronic device may be configured to receive a message for a second external electronic device, from a first external electronic device through a first network associated with the first external electronic device among a plurality of rich communication suite (RCS) networks using a communication circuit, to determine whether to transmit the message based on a profile of the second external electronic device including at least one throttling metric for the first network among the plurality of RCS networks stored in a memory and a network state of the first network, and to convert the message based on a protocol of a second network and to transmit the converted message to the second external electronic device through the second network based on determining to transmit the message.

System and method for providing conversational contents

Provided are a semiconductor device and a fabrication method thereof. The semiconductor device may include a fin-shaped active pattern and a gate electrode provided on a substrate, first and second spacers provided on a sidewall of the gate electrode, impurity regions provided at both sides of the gate electrode, a contact plug electrically connected to one of the impurity regions, and a third spacer enclosing the contact plug and having a top surface positioned at substantially the same level as a top surface of the contact plug.

Semiconductor device and method of fabricating the same

A semiconductor device includes a multi-fin active region having a plurality of sub-fins sequentially arranged on a substrate. A gate electrode crosses the multi-fin active region. Source/drain regions are disposed on the sub-fins except a first sub-fin and a last sub-fin. A contact plug is disposed on the source/drain regions.

Semiconductor device having an inactive-fin

A fine-patterning method includes forming a mask layer with lower and upper mask layers on an underlying layer, forming a pair of sacrificial patterns on the mask layer, forming a connection spacer between the sacrificial patterns and first spacers that are spaced apart from each other with the pair of sacrificial patterns interposed therebetween and covering side surfaces of the sacrificial patterns, etching the upper mask layer using the first spacers and the connection spacer as an etch mask to form upper mask patterns, forming second spacers to cover side surfaces of the upper mask patterns, etching the lower mask layer using the second spacers as an etch mask to form lower mask patterns, and etching the underlying layer using the lower mask patterns as an etch mask.

Fine patterning methods and methods of fabricating semiconductor devices using the same

The disclosure provides semiconductor devices and methods of manufacturing the same. The method includes etching a substrate using a first mask pattern formed on the substrate to form a trench, forming a preliminary device isolation pattern filling the trench and including first and second regions having first thicknesses, forming a second mask pattern on the first region, etching an upper portion of the second region and a portion of the first mask pattern, which are exposed by the second mask pattern, to form a second region having a second thickness smaller than the first thickness, removing the first and second mask patterns, and etching upper portions of the first region and the second region having the second thickness to form a device isolation pattern defining preliminary fin-type active patterns. An electronic device including a semiconductor device and a manufacturing method thereof are also disclosed.

Semiconductor device, electronic device including the same and manufacturing methods thereof

A method of forming a semiconductor device can be provided by forming a mask pattern including non-metallic first spaced-apart portions that extend in a first direction on a lower target layer and non-metallic second spaced-apart portions that extend in a second direction on the lower target layer to cross-over the non-metallic first spaced-apart portions at locations. The lower target layer can be etched using the mask pattern.

Methods for forming a semiconductor device using masks with non-metallic portions

Provided are a semiconductor device and a method of fabricating the same. The device may include a transistor on a substrate comprising a gate insulating pattern, a gate electrode and an impurity region, a shared contact plug electrically connected to the gate electrode and the impurity region, and an etch-stop layer between side surfaces of the gate electrode and the shared contact. The shared contact plug may include a first conductive pattern electrically connected to the first impurity region and a second conductive pattern electrically connected to the gate electrode, and a top surface of the first conductive pattern may be higher than a top surface of the gate electrode.

A semiconductor device and a method of forming the semiconductor device includes: forming gate electrodes on a semiconductor substrate and forming spacers on both side surfaces of the gate electrodes; forming capping patterns on the gate electrodes; and forming a metal contact between the gate electrodes. Each of the capping patterns is formed to have a width greater than a width of each of the gate electrodes.

Semiconductor device and method of forming the same

Growing community of inventors

Suwon-si, South Korea

Myeongcheol Kim