Samsung Electronics Co., Ltd.

Myeong-hee Oh

Ji-Sung Kim

Ho-Young Shin

A non-volatile memory device includes a memory cell array including a plurality of memory cells, wherein at least one selected memory cell that is selected from among the plurality of memory cells is programmed based on a high voltage, a high voltage generator configured to generate the high voltage by boosting an input voltage based on a pumping clock, a pumping clock generator configured to generate the pumping clock, a program current controller configured to adjust a program current flowing in the at least one selected memory cells, and a control logic configured to control a frequency of the pumping clock and an amount of the program current based on a time in a program section in which the at least one selected memory cell is programmed.

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Seongnam-si, South Korea

Myeong-hee Oh