Agency for Science, Technology and Research

Institute of Microelectronics

Photonics Concepts Pte. Ltd.

My The Doan

Vladimir Bliznetsov

Ramana Murthy Badam

Chang Kuo Chang

Chi Fo Tsang

Desmond Rodney Lim

Bo Yu

Joon Mo Kang

Chester Leung

Mark Hatzilambrou

Yin Qian

Eric Johnson

A new method to form a VLSI-photonic heterogeneous system device is achieved. The method comprises providing an optical substrate comprising at least one passive optical component formed therein. An electronic substrate is provided comprising at least one active electronic component formed therein. A plurality of metal pillars are formed through the optical substrate and protruding out a first surface of the optical substrate. A plurality of metal pads are formed on a first surface of the electronic substrate. The optical substrate and the electronic substrate are bonding together by a method further comprising aligning the first surfaces of the optical and electronic substrates such that the protruding metal pillars contact the metal pads. The optical and electronic substrates are then thermally treated such that the metal pillars bond to the metal pads.

VLSI-photonic heterogeneous integration by wafer bonding

Formation, through etching, of structures whose minimum width is less than can be achieved by optical means alone has been achieved by inserting a layer of sandwiching material between the photoresist (or hard mask if used) and the structure. By adjustment of the relative etch rates of this layer and the structure, a uniform lateral width reduction and surface smoothing of the structure is achieved.

Method to trim and smooth high index contrast waveguide structures

One or more embodiments of the instant invention may be briefly summarized as follows. A planarization and smoothing segment includes: (a) a reverse mask and etching method; a sacrificial layer and selective CMP followed by non selective CMP; or a sacrificial layer and selective etching followed by non-selective CMP. A buffer layer to protect wave guide segment includes: (a) waveguide formation followed by buffer layer deposition; or a buffer deposition over the waveguide layer followed by waveguide formation.

Method of fabricating optical waveguide devices with smooth and flat dielectric interfaces

Planarization of the top surfaces of layers that are more than about a micron thick is beset with problems not encountered in thinner layers. These problems have been overcome by means of a process that, initially allows the formation of 'horns' in the surface that is to be planarized. Said horns are then selectively etched away while other parts of the surface are protected, following which CMP is initiated and the surface gets planarized. A total of four embodiments are disclosed.

Method of thick film planarization

A method of integrated circuit component integration in copper interconnects, including the following steps of the first embodiment. A wafer is provided having an exposed top-most planar copper interconnect. The wafer being divided into one or more areas selected from the group consisting of: a spiral inductor area having an exposed planar copper interconnect bottom half of a stacked spiral inductor; a MIM capacitor area having an exposed planar copper interconnect bottom plate and an exposed planar copper interconnect contact point of a MIM capacitor; and a precision resistor area having a two exposed planar copper interconnect routing points of a precision resistor. A spiral inductor is formed within the spiral inductor area; a MIM capacitor is formed within the MIM capacitor area; and a precision resistor is formed within the precision resistor area.

Single damascene method for RF IC passive component integration in copper interconnect process

Growing community of inventors

Singapore, Singapore

My The Doan